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Selectivity and Copper CVD From CuI β-Diketonates: Importance of Gas Phase Chemistry

Published online by Cambridge University Press:  22 February 2011

C.-M. Chiang  and
L. H. Dubois
C.-M. Chiang
Affiliation:
AT&T Bell laboratories, Murray Hill, NJ 07974
L. H. Dubois
Affiliation:
AT&T Bell laboratories, Murray Hill, NJ 07974
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Abstract

The gas phase chemistry of CuI(hexafluroacetylacetonateXvinyltrimethylsilane),Cu(hfac)(vtms), was investigated using molecular beam techniques. Mass spectrometric and infrared spectroscopic data clearly show that Cu(hfac)2 is produced at nozzle temperatures in excess of 500 K. This result suggests that Cu(hfac)(vtms) undergoes a thermally induced disproportionation reaction in the gas phase to yield CuII (hfac)2, vtms, and atomic copper. As a consequence, copper CVD from CuIβdiketonates is deprived of its inherent selectivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 341
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Van Hemert, R. L., Spendlove, L. B., Sievers, R. E., J. Electrochem. Soc. 112, 1123 (1965).Google Scholar
2. Temple, D., Reisman, A., J. Electrochem. Soc. 136, 3525 (1989).Google Scholar
3. Shin, H. K., Chi, K. M., Hampden-Smith, M. J., Kodas, T. T., Farr, J. D., Paffett, M. F., Adv. Mater. 3, 246 (1991); Mat Res. Soc. Symp. Proc. 204, 421 (1991); Chem. Mater. 4, 788 (1992).Google Scholar
4. Norman, J. A. T., Muratore, B. A., Dyer, P. N., Roberts, D. A., Hochberg, A. K., J. de. Physique IV 1, C2–263 (1991).Google Scholar
5. Dubois, L. H., Jeffries, P. M., Girolami, G. S., Proc. Adv. Metal, for ULSI Appl., edited by Rana, V. V. S., Joshi, R. V., Ohdomari, I., p. 375 (1992).Google Scholar
6. Both gas phase [7–9] and adsorbed [10] water also play a crucial role in determining selectivity.Google Scholar
7. Awaya, N., Arita, Y., Proc. 1991 Symp. VLSI Technol. P. 37, Oiso, Japan, IEEE (1991);Google Scholar
Adv. Metal, for ULSI Appl., edited by Rana, V. S., Joshi, R. V., Ohdomari, I., p. 345 (1992).Google Scholar
8. Lecohier, B., Philippoz, J.-M., Calpini, B., Stumm, T., Van Den Bergh, H., J. Physique IV, Colloque C2 1, 279 (1991);Google Scholar
Locohier, B., Calpini, B., Philippoz, J.-M., Van Den Bergh, H., J. Appl. Phys. 72, 2022 (1992).Google Scholar
9. Chiang, C.-M., Dubois, L. H., manuscript in preparation.Google Scholar
10. Dubois, L. H., Zegarski, B. R., J. Electrochem. Soc. 139, 3295 (1992).Google Scholar
11. Holtzclaw, H. F. Jr, Lintvedt, R. L., Baumgarten, H. E., Parker, R. G., Bursey, M. M., Rogerson, P. F., J. Am. Chem. Soc. 91, 3774 (1969).Google Scholar
12. Nakamoto, K., Morimoto, Y., Martell, A. E., J. Phys. Chem. 66, 346 (1962).Google Scholar
13. Morris, M. L., Moshier, R. W., Sievers, R. E., Inorg. Chem. 2, 411 (1963).Google Scholar
14. Girolami, G. S., Jeffries, P. M., Dubois, L. H., J. Am. Chem. Soc. 115, 0000 (1993).Google Scholar
15. Lin, W., Girolami, G. S., Nuzzo, R. G., unpublished observations.Google Scholar
16. Norman, J. A. T., Muratore, B. A., Dyer, P. N., Roberts, D. A., Hochenberg, A. K., Dubois, L. H., Proc. Int. Conf. Electron. Mat. 1992 (Europe. Mate. Res. Soc.), in press.Google Scholar
17. Gross, M. E., Donnelly, V. M., Proc. Adv. Metal, for ULSI Appl., edited by Rana, V. V. S., Joshi, R. V., Ohdomari, I., p. 355 (1992); J. Vac. Sci. Technol. A10,0000 (1992).Google Scholar