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Selectively Nucleated Lateral Crystallization for a Large Single-Grained Pb(Zr,Ti)O3 on Polycrystalline-Silicon Thin-Film Transistors for System-On-Glass Applications

Published online by Cambridge University Press:  16 June 2015

Jae Hyo Park  and
Seung Ki Joo
Jae Hyo Park
Affiliation:
Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Republic of Korea
Seung Ki Joo
Affiliation:
Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Republic of Korea
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Abstract

A single-grained Pb(Zr,Ti)O3 (PZT) was successfully grown for the gate dielectric of polycrystalline-silicon (poly-Si) thin-film transistor (TFT). The total structure was MoW/PZT/HfO2/poly-Si/glass. The giant single-grained PZT was obtained by controlling the artificial nucleation formed by Pt dots in a desirable location and enlarging the nucleated seed until it covers the poly-Si channel. The single-grained diameter size was 40 μm with a (100) dominated texture. The poly-Si memory device with single-grained PZT showed an excellent ferroelectric, electrical and reliability properties comparing with poly-Si memory device with poly-grained PZT. Moreover, eliminating the grain boundary in PZT film showed the fatigue and retention characteristics with only 1.1 % after 1013 cycles and 22 % after 1 month, respectively.

Keywords

thin filmferroelectricgrain boundaries
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1792: Symposium CC/FF – Defects and Materials Issues in Semiconductors―Relationship to Optoelectronic Properties and Device Reliability , 2015 , mrss15-2134971
Copyright
Copyright © Materials Research Society 2015 

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