Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-03T01:05:32.842Z Has data issue: false hasContentIssue false
  • English
  • Français

Selective Metallization of CVD Diamond Films

Published online by Cambridge University Press:  25 February 2011

J. M. Calvert ,
P. E. Pehrsson ,
C. S. Dulcey  and
M. C. Peckerar
J. M. Calvert
Affiliation:
Center for Bio/Molecular Science and Engineering, Code 6090, Naval Research Laboratory, Washington, DC 20375–5000
P. E. Pehrsson
Affiliation:
Chemistry Division, Code 6174, Naval Research Laboratory, Washington, DC 20375–5000
C. S. Dulcey
Affiliation:
Center for Bio/Molecular Science and Engineering, Code 6090, Naval Research Laboratory, Washington, DC 20375–5000
M. C. Peckerar
Affiliation:
Nanoelectronics Process Facility, Code 6804, Naval Research Laboratory, Washington, DC 20375–5000
Get access

Abstract

A process has been developed for the deposition of patterned adherent metal on diamond substrates using low temperature processing conditions. CVD diamond films on Si wafers were oxidized with an RFO2 plasma and subsequently functionalized by attachment of self-assembled ultrathin films (UTFs) to the oxidized diamond surface. The UTFs were exposed to patterned deep UV radiation, and selectively metallized by electroless (EL) deposition. EL Ni and Co patterns, with feature sizes to 20 μm linewidth have been produced. Oxidized and UTF-modified surfaces were characterized by surface spectroscopie and wettability techniques. The EL metal deposits on the diamond substrate passed the Scotch tape adhesion peel test.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 905
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Bachmann, P. k. and Messier, R., Chem. Eng. News 67 (May 15), 24 (1989).Google Scholar
2. Hoover, D., Lynn, S., and Garg, D., Solid State Technology 24 (2), 89 (1991).Google Scholar
3. Moazed, K. L., Zeidler, J. R. and Taylor, M. J., J. Appl. Phys 68, 2246 (1990).CrossRefGoogle Scholar
4. Das, K., et. al., in Applications of Diamond Films and Related Materials, edited by Tzeng, S., Yoshikawa, M., Murakawa, M., and Feldman, A. (Elsevier Science Publishers B.V., 1991), p. 301.Google Scholar
5. Schnur, J. M., et. al., U. S. Patent 5,079,600.Google Scholar
6. Calvert, J. M., et. al. Solid State Technology, 24 (10), 77 (1991).Google Scholar
7. Calvert, J. M., et. al., Proc. 3rd Intl. Symp ULSI Sci. Tech., 91–11. 145 (1991).Google Scholar
8. Calvert, J. M., et. al., J. Vac. Sci. Tech. B, 9, 3447 (1991).CrossRefGoogle Scholar
9. Calvert, J. M., et. al., Thin Solid Films, in press.Google Scholar
10. Calvert, J. M., Dressick, W. J., Calabrese, G. S., Gulla, M., U. S. Patent Application 07/691, 565, pending.Google Scholar
11. Dressick, W. J., et. al., Proc. MRS Spring 1992 Mtg., Paper C8.22, in press.Google Scholar
12. Evans, T. and Phaal, C., Proc. Conf. Carbon, 5th, 1961, 1, 147 (1962).Google Scholar
13. Fedoseev, D. V. and Uspenskaya, K. S., Russ. J. Phys. Chem., 48 (6), 897 (1974)Google Scholar
14. Marsh, H., O'Hair, T.E., and Reed, R., Carbon, 6, 284 (1964).Google Scholar
15. Calvert, J., Pehrsson, P., and Peckerar, M., U. S. Patent Application, pending.Google Scholar
16. Durfour, C., Georger, J., and Stenger, D., J. Am. Chem. Soc, submitted.Google Scholar
17. Anderson, M. A., et. al., manuscript in preparation.Google Scholar