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Selective Growth, Diffusion Layers and the Schottky Barrier Height in Nickel Silicide-Silicon Interfaces

Published online by Cambridge University Press:  22 February 2011

J. L. Erskine  and
Yu-Jeng Chang
J. L. Erskine
Affiliation:
Department of PhysicsUniversity of TexasAustin, Texas 78712
Yu-Jeng Chang
Affiliation:
Department of PhysicsUniversity of TexasAustin, Texas 78712
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Abstract

Selected interface phenomena associated with metal semiconductor contacts are discussed in relation to recent experimental and theoretical work on the electronic properties, interface formation and structure, and device characteristics of nickel-silicon interfaces. Evidence is presented which suggests that a well-defined interfacial phase is present at all nickel silicide-silicon boundaries formed by deposition of nickel atoms onto silicon surfaces. The existence of this phase is shown to account for several important interface properties of the nickel silicide system including selective growth, the rotational twin structure of epitaxial films and the observed invariance of the nickel silicide-silicon Schottky barrier height as the silicide contact stoichiometry is varied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 353
Copyright
Copyright © Materials Research Society 1984

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