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Seeding Solid Phase Crystallization of Amorphous Silicon Films with Embedded Nanocrystals

Published online by Cambridge University Press:  01 February 2011

Curtis Anderson  and
Uwe Kortshagen
Curtis Anderson
Affiliation:
[email protected], University of Minnesota, Department of Mechanical Engineering, 111 Church St. S.E., Minneapolis, MN, 55455United States
Uwe Kortshagen
Affiliation:
[email protected], University of Minnesota, Department of Mechanical Engineering, 111 Church St. S.E., Minneapolis, MN, 55455, United States
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Abstract

Silicon nanocrystals with diameters up to 30 nm are used as nucleation seeds for fast solid phase crystallization of amorphous silicon films. Purely amorphous films required an incubation time of up to 12 hours at 600°C prior to the onset of nucleation, while films with nanocrystals embedded between layers of amorphous silicon grew immediately upon annealing in a quartz tube furnace. Structural characterization was performed by heated-stage transmission electron microscopy and Raman spectroscopy.

Keywords

Sicrystal growthphotovoltaic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1066: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2008 , 2008 , 1066-A06-14
Copyright
Copyright © Materials Research Society 2008

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