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Seebeck and Spin Seebeck effect in Gd-doped GaN thin films for Thermoelectric Devices and Applications

Published online by Cambridge University Press:  11 August 2011

Bahadir Kucukgok
Affiliation:
Department of Optical Science and Engineering, University of North Carolina at Charlotte, NC, 28213, USA.
Liqin Su
Affiliation:
Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, NC, 28213, USA.
Elisa N. Hurwitz
Affiliation:
Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, NC, 28213, USA.
Andrew Melton
Affiliation:
Department of Electrical and Computer Engineering, Georgia Institute of Technology, GA, 30332, USA.
Liu Zhiqiang
Affiliation:
Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, NC, 28213, USA. Semiconductor Lighting R&D Center Institute of Semiconductors Chinese Academy of Sciences, P.O. Box 912 Beijing 100083Beijing, China.
Na Lu
Affiliation:
Department of Engineering Technology, Sustainable Material and Renewable Technology (SMART) Laboratory, University of North Carolina at Charlotte NC, 28213, USA.
Ian T. Ferguson
Affiliation:
Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, NC, 28213, USA.
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Abstract

GaN-based dilute magnetic semiconductors (DMS) have recently been investigated for use in spintronic devices. In particular, Gd-doped GaN has shown very promising room temperature ferromagnetic behavior and potential for use in spintronics applications. III-Nitride materials have recently had their thermoelectric properties investigated; however this work has not been extended to Nitride-based DMS. Understanding the spin-calorimetric characteristics of GaN-based DMS is important to the successful development of low-power spintronic devices. In this paper the Seebeck and spin-Seebeck effect in MOCVD grown Gd-doped GaN (Gd: GaN) are investigated.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

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