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Second-Harmonic Generation in Oriented CdSe-Nanocrystal-Doped Indium Tin Oxide Film and its Application to an Infrared Detector

Published online by Cambridge University Press:  10 February 2011

A. Narazaki ,
T. Hirano ,
J. Sasai ,
K. Tanaka  and
K. Hirao
A. Narazaki
Affiliation:
Department of Material Chemistry, Graduate School of Engineering, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan, [email protected]
T. Hirano
Affiliation:
Department of Material Chemistry, Graduate School of Engineering, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan, [email protected]
J. Sasai
Affiliation:
Department of Material Chemistry, Graduate School of Engineering, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan, [email protected]
K. Tanaka
Affiliation:
Department of Material Chemistry, Graduate School of Engineering, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan, [email protected]
K. Hirao
Affiliation:
Department of Material Chemistry, Graduate School of Engineering, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan, [email protected]
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Abstract

Second-harmonic generation in CdSe nanocrystals doped in indium tin oxide ( ITO ) films has been examined. The thin film samples were prepared by r.f. magnetron sputtering with ITO target on which CdSe chips were placed. The X-ray diffraction patterns of as-deposited films indicate that CdSe crystallites are precipitated in an amorphous ITO matrix, and they are preferentially oriented in the direction of (111) plane of zinc blende structure or (002) plane of wurtzite structure. The mean diameter of CdSe crystallite was estimated to be 3-5 nm using Scherrer's equation. Moreover, the CdSe crystallites grew with keeping its initial orientation when a dc voltage of 50 V/cm was applied in the direction parallel to the film surface. The application of the electric field effectively enhanced the second-harmonic intensity by two orders of magnitude compared to that of the as-deposited films. The second-order nonlinear coefficient d(2) for the electrically-treated specimen calculated on a basis of a modified Maker fringe theory is d31 = 3.0 × 10 pm/V at the wavelength of 1064 nm, which is comparable to d values reported for CdSe single crystal, d31 = 25 pm/V at 1054 nm and d33 =76 pm/V at 1064 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 421
Copyright
Copyright © Materials Research Society 2000

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