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The Scattering Distribution from Semiconductors as a Function of Angle and Energy Loss in the Electron Microscope
Published online by Cambridge University Press: 10 February 2011
Abstract
We examine the scattering distribution from thin C, Ge and thick Si specimens as a function of scattering angle and energy loss, in order to gain insight into the relative contributions to both low and high angle annular dark field images from elastically and inelastically scattered elections.
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- Copyright © Materials Research Society 1997
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