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Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy

Published online by Cambridge University Press:  15 February 2011

Huajie Chen ,
A. R. Smith ,
R. M. Feenstra ,
D. W. Greve  and
J. E. Northrup
Huajie Chen
Affiliation:
Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
A. R. Smith
Affiliation:
Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
R. M. Feenstra
Affiliation:
Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
D. W. Greve
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University
J. E. Northrup
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

InGaN alloys with indium compositions ranging from 0–40% have been grown by molecular beam epitaxy. The dependence of the indium incorporation on growth temperature and group III/group V ratio has been studied. Scanning tunneling microscopy images, interpreted using first-principles theoretical computations, show that there is strong indium surface segregation on InGaN. Based on this surface segregation, a qualitative model is proposed to explain the observed indium incorporation dependence on the growth parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G9.5
Copyright
Copyright © Materials Research Society 1999

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References

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