Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-27T23:21:07.847Z Has data issue: false hasContentIssue false
  • English
  • Français

Scanning Spreading Resistance Microscopy For 3D-Carrier Profiling in FinFET-based Structures

Published online by Cambridge University Press:  01 February 2011

Jay Mody ,
Pierre Eyben ,
Wouter Polspoel ,
Malgorzata Jurczak  and
Wilfried Vandervorst
Jay Mody
Affiliation:
[email protected], Katholieke Universiteit Leuven, Electrical Engineering Department, INSYS, Kasteelpark Arenberg 10,, Leuven, B-3001, Belgium
Pierre Eyben
Affiliation:
[email protected], IMEC vzw, Kapeldreef 75, Leuven, B-3001, Belgium
Wouter Polspoel
Affiliation:
[email protected], Katholieke Universiteit Leuven, Electrical Engineering Department, INSYS, Kasteelpark Arenberg 10,, Leuven, B-3001, Belgium
Malgorzata Jurczak
Affiliation:
[email protected], IMEC vzw, Kapeldreef 75,, Leuven, B-3001, Belgium
Wilfried Vandervorst
Affiliation:
[email protected], Katholieke Universiteit Leuven, Electrical Engineering Department, INSYS, Kasteelpark Arenberg 10,, Leuven, B-3001, Belgium
Get access

Abstract

Junction formation in FinFET-based 3D-devices is a challenging problem as one targets a complete conformal doping of the source/drain regions in order to produce equal gate-profile overlaps (and thus transistor behavior) on all sides of the fins. Due to the lack of predictive modeling for several of the doping strategies explored (plasma immersion, cluster implants, vapor phase deposition, etc…) it becomes difficult to correctly predict the performance of the devices and hence, accurate 3D-doping profile determination is desired. Although several dopant/carrier profiling methods exist with excellent one- or two-dimensional resolution and properties, there is an urgent need to extend these towards a quantitative three-dimensional geometry. In this work, we use scanning spreading resistance microscopy (SSRM) with dedicated FinFET test structure to obtain three-dimensional information from successive two-dimensional scanning spreading resistance maps. We also assess the validity of our methodology by comparing various sections along the fins which represent the variability due to the processing and measurement procedure.

Keywords

scanning probe microscopy (SPM)devicesactivation analysis
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1070: Symposium E – Doping Engineering for Front-End Processing , 2008 , 1070-E01-11
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Lenoble, D. et al., “Enhanced Performance of PMOS MUGFET via Integration of Conformal Plasma-Doped Source/Drain Extensions,” VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on, 2006, pp. 168–169.Google Scholar
[2] Lenoble, D. et al., “The junction challenges in the FinFETs device,” Junction Technology, 2006. IWJT '06. International Workshop on, 2006, pp. 78–83.Google Scholar
[3] Burenkov, A. and Lorenz, J., “3D simulation of process effects limiting FinFET performance and scalability,” Simulation of Semiconductor Processes and Devices, München, Germany: 2004, pp. 125–128.Google Scholar
[4] Kelly, T.F. and Miller, M.K., “Invited Review Article: Atom probe tomography,” Review of Scientific Instruments, vol. 78, Mar. 2007, pp. 031101–20.Google Scholar
[5] Eyben, P. et al., “Probing Semiconductor Technology and Devices with Scanning Spreading Resistance Microscopy,” Scanning Probe Microscopy, Springer New York, 2007, pp. 31–87.Google Scholar
[6] Eyben, P. et al., “Impact of the environmental conditions on the electrical characteristics of scanning spreading resistance microscopy,” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 26, Jan. 2008, pp. 338–341.Google Scholar
[7] Zhang, L. et al., “High-resolution characterization of ultrashallow junctions by measuring in vacuum with scanning spreading resistance microscopy,” Applied Physics Letters, vol. 90, May. 2007, pp. 192103–3.Google Scholar
[8] Zhang, L. et al., “Reproducible and High-Resolution Analysis on Ultra-Shallow-Junction CMOSFETs by Scanning Spreading Resistance Microscopy,” Junction Technology, 2006. IWJT '06. International Workshop on, 2006, pp. 108–111;Google Scholar