Hostname: page-component-6bf8c574d5-k2jvg Total loading time: 0 Render date: 2025-03-07T18:04:06.977Z Has data issue: false hasContentIssue false
  • English
  • Français

Scanning E-Beam Annealing of Mos Devices

Published online by Cambridge University Press:  15 February 2011

J.D. Speight ,
A.E. Glaccum ,
D. Machin ,
R.A. Mcmahon  and
H. Ahmed
J.D. Speight
Affiliation:
British Telecommunications Research Laboratories, Martlesham Heath, Ipswich 1P5 7RE, ENGLAND
A.E. Glaccum
Affiliation:
British Telecommunications Research Laboratories, Martlesham Heath, Ipswich 1P5 7RE, ENGLAND
D. Machin
Affiliation:
British Telecommunications Research Laboratories, Martlesham Heath, Ipswich 1P5 7RE, ENGLAND
R.A. Mcmahon
Affiliation:
Engineering Department, University of Cambridge, Cambridge CB2 1PZ, ENGLAND
H. Ahmed
Affiliation:
Engineering Department, University of Cambridge, Cambridge CB2 1PZ, ENGLAND
Get access

Abstract

Conditions for the scanning e-beam activation of P and As implanted source and drain junctions in production NMOS Si gate devices have been established. MOS devices with e-beam annealed, As-implanted, source and drain regions have been produced. The transistor parameters are found to be close to those of furnace annealed control devices, but e-beam annealed devices exbibit a smaller short-channel effect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 383
Copyright
Copyright © Materials Research Society 1981

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Zimmer, G., Electronics Letters 15, 184 (1979).CrossRefGoogle Scholar
2. Miyao, M., Koyanagi, M., Tamura, H., Hashimoto, N. and Tokuyama, T., Proc. 1979 Int. Conf. Solid State Dev., Tokyo 1979, Japan. Jour. Appl. Phys. 19(Suppl. 19–1) 129 (1980).Google Scholar
3. Teng, T.C., Merritt, J.D., Velez, J., Peng, J. and Palkuti, L., Electronics Letters 16, 478 (1980).Google Scholar
4. McMahon, R.A. and Ahmed, H., Electronics Letters 15, 45 (1979).Google Scholar
5. McMahon, R.A., Ahmed, H., Speight, J.D. and Dobson, R.D.. Proceedings of the Electrochemical Society 80(1), 130 (1980).Google Scholar
6. McMahon, R.A., Ahmed, H., Dobson, R.M. and Speight, J.D., Electronics Letters 16, 295 (1980).Google Scholar
7. McMahon, R.A. and Ahmed, H., Proceedings of the Electrochemical Society 80(1), 123 (1980).Google Scholar
8. Ranasinghe, D. and Cross, A. in Microcircuit Engineering Eds. Ahmed, H. and Nixon, W.C., p.501 (Cambridge University Press, England 1980).Google Scholar
9. Claasen, F.M., Solid State Electronics 21, 505 (1978).Google Scholar
10. McMahon, R.A., Unpublished Data.Google Scholar