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Ruthenium Oxide Electrodeposition on Titanium Interdigitated Microarrays for Energy Storage

Published online by Cambridge University Press:  27 February 2013

K. Armstrong
Affiliation:
Institut National de la Recherche Scientifique, 1650 Blvd Lionel-Boulet, Varennes, QC, Canada J3X 1S2
T.M. Dinh
Affiliation:
Laboratoire d’Analyse et d’Architecture des Systèmes, LAAS-CNRS, 7 av du Colonel Roche, 31077 Toulouse Cedex 4, France.
D. Pech
Affiliation:
Laboratoire d’Analyse et d’Architecture des Systèmes, LAAS-CNRS, 7 av du Colonel Roche, 31077 Toulouse Cedex 4, France.
M. Brunet
Affiliation:
Laboratoire d’Analyse et d’Architecture des Systèmes, LAAS-CNRS, 7 av du Colonel Roche, 31077 Toulouse Cedex 4, France.
J. Gaudet
Affiliation:
Institut National de la Recherche Scientifique, 1650 Blvd Lionel-Boulet, Varennes, QC, Canada J3X 1S2
D. Guay
Affiliation:
Institut National de la Recherche Scientifique, 1650 Blvd Lionel-Boulet, Varennes, QC, Canada J3X 1S2
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Abstract

The electrodeposition of hydrated ruthenium dioxide (hRuO2) on Ti interdigitated current collectors deposited onto silicon substrate has been investigated with the objective of preparing a high capacitance and high power micro-supercapacitor (µ-SC) device. Ti current collectors were synthesised by typical photolithography processes, and hRuO2 thin films were electrodeposited from ruthenium chloride precursors. Device specific capacitances exceeding 20 mF·cm−2 were obtained, and more than 80 % of that value is retained even at scan rate as high as 1 V∙s−1 in 0.5 M H2SO4. The mean specific power per active surface area of the device is 368 mW·cm−2. The device is stable and 90% of the initial capacity is retained after 105 cycles (1 V potential window). The characteristic response time of the hRuO2 µ-SC is 250 ms, with low ESR (0.61 Ω cm−2) and EDR (0.07 Ω cm−2) values. All these characteristics demonstrate the potential of such µ-SC devices to be part of the next generation of micro-supercapacitors.

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Articles
Copyright
Copyright © Materials Research Society 2013 

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