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Room-Temperature HF Vapour-Phase Cleaning for LPCVD EPI of Si and SiGe
Published online by Cambridge University Press: 25 February 2011
Abstract
Silicon dioxide films can be etched in a mixture of HF and H2O vapour. This process can be performed at reduced pressure, which has allowed us to develop a highvacuum compatible etch facility. Channelling-RBS analysis demonstrates the feasibility of epitaxial LPCVD of Si and SiGe layers at 600°C on Si(100) substrates that previously have been vapour-etched in situ at room temperature. With RBS also kinetic information about these deposition reactions can be derived.
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