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Room Temperature Ultraviolet Photoluminescence from 800°C Thermally Oxidized Si1−x−yGexCy Thin Films on Si(100) Substrate

Published online by Cambridge University Press:  10 February 2011

X. M. Cheng ,
Y. D. Zheng ,
L. Zang ,
X. B. Liu ,
S. M. Zhu ,
Z. Y. Lo ,
P. Han  and
R.L. Jiang
X. M. Cheng
Affiliation:
Physics Department, Nanjing University, Nanjing, 210093 China
Y. D. Zheng
Affiliation:
Physics Department, Nanjing University, Nanjing, 210093 China
L. Zang
Affiliation:
Physics Department, Nanjing University, Nanjing, 210093 China
X. B. Liu
Affiliation:
Physics Department, Nanjing University, Nanjing, 210093 China
S. M. Zhu
Affiliation:
Physics Department, Nanjing University, Nanjing, 210093 China
Z. Y. Lo
Affiliation:
Physics Department, Nanjing University, Nanjing, 210093 China
P. Han
Affiliation:
Physics Department, Nanjing University, Nanjing, 210093 China
R.L. Jiang
Affiliation:
Physics Department, Nanjing University, Nanjing, 210093 China
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Abstract

The thermally oxidized Si1−x−yGexCy thin films were grown on silicon substrates by Plasma-enhanced Chemical Vapor Deposition (PECVD) and then wet oxidized at 800°C for 20 minutes. Photoluminescence spectra of the samples were measured at room temperature under 250nm excitation. Two ultraviolet photoluminescence bands with the peaks at ∼370nm and ∼396nm were observed in the oxidized samples. Possible mechanism of this photoluminescence is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 592 , 1999 , 165
Copyright
Copyright © Materials Research Society 2000

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References

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