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Room Temperature Light Induced Electron Spin Resonauce In Undoped Hydrogenated Amorphous Silicon (a-Si:H)

Published online by Cambridge University Press:  28 February 2011

R. Pandya ,
S. Zafar  and
E. A. Schiff
R. Pandya
Affiliation:
Department of Physics, Syracuse University, Syracuse, New York 13244-1130 U. S. A.
S. Zafar
Affiliation:
Department of Physics, Syracuse University, Syracuse, New York 13244-1130 U. S. A.
E. A. Schiff
Affiliation:
Department of Physics, Syracuse University, Syracuse, New York 13244-1130 U. S. A.
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Abstract

The effects of illumination upon the absorption electron spin resonance spectrum of the dangling bond defect system have been studied in undoped amorphous hydrogenated silicon (a-Si:H). A small shift of the inhomogeneous envelope of the system towards higher g-value is observed at roomtemperature. The shift is not accompanied by a significant change in the signal. Results are reported which indicate that this shift is not due to illumination induced heating of the specimen or calibration changes of the spectrometer. The results may be related to previously reported optical bias effects upon transient photocurrent and photoinduced absorption studies.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 155
Copyright
Copyright © Materials Research Society 1986

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References

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