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Room Temperature Growth of Silicon Dioxide Using a Low Energy Ion Beam

Published online by Cambridge University Press:  28 February 2011

S. S. Todorov  and
E. R. Fossum
S. S. Todorov
Affiliation:
Department of Electrical Engineering and Columbia Radiation Laboratory, Columbia University, New York, NY 10027
E. R. Fossum
Affiliation:
Department of Electrical Engineering and Columbia Radiation Laboratory, Columbia University, New York, NY 10027
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Abstract

Ultra-thin films of silicon dioxide are formed on silicon surfaces at room temperature by direct bombardment with an oxygen-containing ion beam at energies of 150 eV or less. The process of film growth is studied.through ellipsometric measurements of their properties as a function of ion energy and dose, oxygen partial pressure and substrate temperature. Typical oxide thicknesses of the order of 50 Å are obtained by three minute or longer exposures to beams of current density 135 μA/cm2. Ion-beam grown oxides are compared to conventional thin oxide films grown at elevated temperatures and show the same stoichiometry. The growth rate decreases rapidly after a continuous oxide film has been formed. Performing the ion bombardment at elevated substrate temperatures leads to only small enhancement of the oxide growth indicating non-thermally driven reaction kinetics.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 349
Copyright
Copyright © Materials Research Society 1987

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