Hostname: page-component-745bb68f8f-d8cs5 Total loading time: 0 Render date: 2025-01-12T07:53:06.283Z Has data issue: false hasContentIssue false
  • English
  • Français

Room Temperature Epitaxy of Al (100) on Si (111)

Published online by Cambridge University Press:  15 February 2011

Marek Sosnowski ,
Samuel Ramac ,
Walter L. Brown  and
Young O. Kim
Marek Sosnowski
Affiliation:
Department of Electrical and Computer Engineering, New Jersey Institute of Technology, University Heights, Newark, New Jersey 07102
Samuel Ramac
Affiliation:
Department of Electrical and Computer Engineering, New Jersey Institute of Technology, University Heights, Newark, New Jersey 07102
Walter L. Brown
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey, 07974
Young O. Kim
Affiliation:
AT&T Bell Laboratories, Holmdel, New Jersey, 07733
Get access

Abstract

There are a number of published reports on the epitaxial growth of Al(111) on Si(111) surfaces usually following a high temperature treatment of the Si surface in UHV. In contrast to these results, we have for the first time observed dominant epitaxial growth of Al(100) films on Si(111) surfaces that have been carefully cleaned and hydrogen terminated and not heated prior to effusion cell deposition of Al at room temperature in UHV. X-ray diffraction shows sharp and intense Al (200) diffraction, enhanced by post deposition annealing. Crystal quality and the dominance of Al(100) structure depend strongly on the substrate treatment and the off-cut angle, both of which control the steps on the Si(111) surface. The steps were found responsible for the epitaxial alignment of the film and the substrate lattices. Details of this alignment were observed in TEM cross-sectional images of the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 213
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yamada, I., Inokawa, H., and Takagi, T., J. Appl. Phys. 56, 2746 (1984).Google Scholar
2. Cho, C.-C., Liu, H. -Y., MRS Symp. Proc. 221, 87 (1991).Google Scholar
3. Miura, Y., Fujieda, S. and Hirose, K., Appl. Phys. Let. 62, 1752 (1993).Google Scholar
4. LeGoues, F. K., Krakow, W. and Ho, P. S., Phil. Mag. 53, 833 (1986).CrossRefGoogle Scholar
5. Liu, J.C., Marwick, A.D. and LeGoues, F. K., Phys. Rev. BGoogle Scholar
6. Choi, C.-H., Harper, R.A., Yaspir, A. S. and Lu, T. -M., Appl. Phys. Let. 51, 1992 (1987).CrossRefGoogle Scholar
7. Kobayashi, T., Seiguchi, A., Hosokawa, N., and Asamaki, T., Jpn. J. Appl. Phys. 27, L1775 (1988).Google Scholar
8. Zhur, A. and McGill, T. C, J. Appl. Phys. 55, 378 (1984).Google Scholar
9. Yamada, I., Usui, H., Tanaka, S., Dahmen, U., Westmacott, K. H., J. Vac. Sci. Technol. A8, 1443 (1990).Google Scholar
10. Nishikawa, S., Tani, K., and Yamaji, T., J. Mater. Res. 7, 345 (1992).Google Scholar
11. Thangaraj, N., Westmacott, K. H., and Dahmen, U., Appl. Phys. Lett. 61, 913 (1992).Google Scholar
12. Chabal, Y. J., Higashi, G. S., and Raghavachari, K., J. Vac. Sci. Technol. A7, 2104 (1989).Google Scholar
13. Higashi, G. S., Becker, R. S., Chabal, Y. J., and Becker, A. J., Appl. Phys. Lett. 58, 1656 (1991).Google Scholar