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Room Temperature Boron Diffusion in Amorphous Silicon

Published online by Cambridge University Press:  01 February 2011

Jeannette M. Jacques ,
Kevin S. Jones ,
Mark E. Law ,
Lance S. Robertson ,
Leonard M. Rubin  and
Enrico Napolitani
Jeannette M. Jacques
Affiliation:
[email protected], Texas Instruments, Inc., Silicon Technology Development, 13121 TI Blvd., MS/365, Dallas, Texas, 75243, United States, 972-995-3453, 942-995-6383
Kevin S. Jones
Affiliation:
[email protected], University of Florida, Materials Science & Engineering, Gainesville, Florida, 32611, United States
Mark E. Law
Affiliation:
[email protected], University of Florida, Electrical & Computer Engineering, Gainesville, Florida, 32611, United States
Lance S. Robertson
Affiliation:
[email protected], Texas Instruments, Inc., Dallas, Texas, 75243, United States
Leonard M. Rubin
Affiliation:
[email protected], Axcelis Technologies, Beverly, MA, 01915, United States
Enrico Napolitani
Affiliation:
[email protected], MATIS-CNR-INFM and Dipartimento di Fisica, Padova, N/A, N/A, Italy
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Abstract

As millisecond annealing is increasingly utilized, the as-implanted profile dominates the final dopant distribution. We characterized boron diffusion in amorphous silicon prior to post-implantation annealing. SIMS confirmed that both fluorine and germanium enhance boron motion in amorphous materials. The magnitude of boron diffusion in germanium amorphized silicon scales with increasing fluorine dose. Boron atoms are mobile at concentrations approaching 1x1019 atoms/cm^3. It appears that defects inherent to the structure of amorphous silicon can trap and immobilize boron atoms at room temperature, but that chemical reactions involving Si-F and Si-Ge eliminate potential trapping sites. Sequential Ge+, F+, and B+ implants result in 80% more boron motion than do sequential Si+, F+, and B+ implants. The mobile boron dose and trapping site concentration change as functions of the fluorine dose through power law relationships. As the fluorine dose increases, the trapping site population decreases and the mobile boron dose increases. This reduction in trap density can result in as-implanted “junction depths” that are as much as 75% deeper (taken at 1x1018 atoms/cm-3) for samples implanted with 500 eV, 1x1015 atoms/cm2 boron.

Keywords

Bdiffusionsimulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 912: Symposium C – Doping Engineering for Device Fabrication , 2006 , 0912-C02-01
Copyright
Copyright © Materials Research Society 2006

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