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The Role of the Lead Zirconate Titanate (PZT)-Pt Interface in the Anomalous Phase Transformation Kinetics in Sputtered Pzt Thin Film Capacitors at Sub-2000 Å Thicknesses

Published online by Cambridge University Press:  25 February 2011

Vinay Chikarmane ,
Jiyoung Kim ,
C. Sudhama ,
Jack Lee ,
Al Tasch  and
Steve Novak
Vinay Chikarmane
Affiliation:
Electrical and Computer Engineering Department, The University of Texas at Austin, Austin, TX 78712
Jiyoung Kim
Affiliation:
Electrical and Computer Engineering Department, The University of Texas at Austin, Austin, TX 78712
C. Sudhama
Affiliation:
Electrical and Computer Engineering Department, The University of Texas at Austin, Austin, TX 78712
Jack Lee
Affiliation:
Electrical and Computer Engineering Department, The University of Texas at Austin, Austin, TX 78712
Al Tasch
Affiliation:
Electrical and Computer Engineering Department, The University of Texas at Austin, Austin, TX 78712
Steve Novak
Affiliation:
Evans East Inc., Plainsboro, NJ 08136
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Abstract

The Pt-Lead Zirconate Titanate (PZT) thin film interface plays a key role in determining the electrical properties and phase transformation kinetics of Pt-PZT-Pt thin film capacitor structures. The results of the electrical and material properties of PZT (65/35) films that vary in thickness between 500 Å to 4000 Å deposited by DC-magnetron sputtering under identical deposition conditions, and subjected to the same post-deposition thermal processing conditions shows that the Pt-PZT interface dominates thin film properties at low thicknesses (≦ 2000 Å). The charge storage density (Qc') and maximum polarization (Pmax) shows an anomalous variation with thickness, showing an initial increase followed by a drastic decrease as the film thickness is scaled down to 500Å. Significant interdiffusion at the PZT film-Pt electrode retards the pyrochlore-to-perovskite phase transformation nucleation and growth rate in PZT films of thickness 2000Å and lower. Gate polarity dependence of the time-tobreakdown and the degradation field is observed for all PZT film thicknesses (including 4000Å). This indicates that the ferroelectric film-electrode interface has an important role to play in determining the electrical reliability properties even in the 4000Å thick PZT film, although Qc' and Pmax are not adversely affected at these thicknesses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 243: Symposium G – Ferroelectric Thin Films II , 1991 , 367
Copyright
Copyright © Materials Research Society 1992

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