Article contents
The Role of Oxygen In the CF2Cl2 Reactive Ion Etching of Pecvd Films
Published online by Cambridge University Press: 16 February 2011
Abstract
An extensive study on 02 effects on RIE of PECVD a-Si:H and SiNx has been carried out. Mixtures of CF2Cl2/HCI and CF2Cl2/CF3Cl were used as base gases. The addition of O2 into these gases changed the film etch rate and etch selectivity in different ways. Process results were interpreted by examining the plasma phase chemistry, the ion bombardment energy, and ESCA surface chemical states.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1991
References
REFERENCES
- 1
- Cited by