Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-03T02:10:59.813Z Has data issue: false hasContentIssue false

The Role of Oxygen In the CF2Cl2 Reactive Ion Etching of Pecvd Films

Published online by Cambridge University Press:  16 February 2011

Yue Kuo*
Affiliation:
IBM T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
Get access

Abstract

An extensive study on 02 effects on RIE of PECVD a-Si:H and SiNx has been carried out. Mixtures of CF2Cl2/HCI and CF2Cl2/CF3Cl were used as base gases. The addition of O2 into these gases changed the film etch rate and etch selectivity in different ways. Process results were interpreted by examining the plasma phase chemistry, the ion bombardment energy, and ESCA surface chemical states.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kuo, Y., J. Electrochem. Soc., 137 (4), 1235 (1990).Google Scholar
2. Kuo, Y., J. Vac. Sci. Technol., A 8 (3), 1702 (1990).Google Scholar
3. Kuo, Y. and Crowder, M. S., Plasma Processing, edited by Mathad, G. S. and Hess, D. W., (Electrochem. Soc., 90-14, Pennington, N.J 1990) pp. 324334.Google Scholar
4. Flamm, D. L., Solid State Technology, pp. 109–116, April 1979.Google Scholar
5. Marta, J. C., Hess, D. W., and Anderson, W. E., Plasma Chem. Plasma Processing, 10 (2), 261 (1990).Google Scholar
6. Mogab, C. J., Adams, A. C. and Flamm, D. F., J. Appl. Phys., 49 (7), 3796 (1978).Google Scholar
7. CRC Handbook of Chemistry and Physics, 69 th edition, editd by Weast, R. C., (Chemical Rubber, Boca Ratton, Fl. 19881989), p. E-93.Google Scholar