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Role of Material Structure on Molecular Diffusion of Hydrogen in a-Si:C:H Films

Published online by Cambridge University Press:  15 February 2011

E. H. C. Ullersma ,
D. K. Inia ,
F.H.P.M. Habraken ,
W.G.J.H.M. Van Sark ,
W. F. Van Der Weg ,
K. T. Westerduin  and
A. Van Veen
E. H. C. Ullersma
Affiliation:
Debye Institute, Department of Atomic and Interface Physics, Utrecht University, P.O. Box 80.000, NL-3508 TA Utrecht, the, Netherlands
D. K. Inia
Affiliation:
Debye Institute, Department of Atomic and Interface Physics, Utrecht University, P.O. Box 80.000, NL-3508 TA Utrecht, the, Netherlands
F.H.P.M. Habraken
Affiliation:
Debye Institute, Department of Atomic and Interface Physics, Utrecht University, P.O. Box 80.000, NL-3508 TA Utrecht, the, Netherlands
W.G.J.H.M. Van Sark
Affiliation:
Debye Institute, Department of Atomic and Interface Physics, Utrecht University, P.O. Box 80.000, NL-3508 TA Utrecht, the, Netherlands
W. F. Van Der Weg
Affiliation:
Debye Institute, Department of Atomic and Interface Physics, Utrecht University, P.O. Box 80.000, NL-3508 TA Utrecht, the, Netherlands
K. T. Westerduin
Affiliation:
Delft University of Technology, Department of Reactor Physics, Mekelweg 15, NL-2629 BJ Delft, the, Netherlands
A. Van Veen
Affiliation:
Delft University of Technology, Department of Reactor Physics, Mekelweg 15, NL-2629 BJ Delft, the, Netherlands
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Abstract

We used Fourier Transform Infra-Red (FTIR) analysis of bi-layers of plasma-grown hy-drogenated amorphous silicon-carbide films to investigate the role of the material structure in the hydrogen diffusion process. In the bi-layers one layer was deposited using CH4/SiH4 and in the other layer CD4/SiD4 was applied. The carbon concentration was 20 at.%. In previous work we showed, using Elastic Recoil Detection (ERD) and Thermal Desorption Spectrometry (TDS), that the hydrogen moves molecular through these films in the temperature range 325 < T < 450 °C [1]. Using FTIR we obtained information about the number of Si-H and Si-D bonds and their change upon annealing. The FTIR data indicate a structural change during annealing. A comparison with the TDS spectra led us to the conclusion that at higher temperatures the out-diffusion of hydrogen stops because of the hindrance of the molecular transport.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 141
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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