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The Role of Lattice Mismatch in Growth of Epitaxial Cubic Silicides on Silicon

Published online by Cambridge University Press:  26 February 2011

R. A. Hamm ,
J. M. Vandenberg ,
J. M. Gibson  and
R. T. Tung
R. A. Hamm
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. M. Vandenberg
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. M. Gibson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R. T. Tung
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

The lattice mismatch of single-crystal epitaxial nickel disilicide of orientation A and B on Si(111) has been measured in and out of the <111> growth direction using a four-circle X-ray diffractometer. In both directions the mismatch of the as-grown B-type film was found to be larger than for the A-type; after annealing at 800°C the mismatch of the A-type approached the value of the B-type, while the latter remained the same. This result suggests that the B-type NiSi2 film has relaxed more during growth than the A-type which can only be relieved by subsequent annealing. This difference in A- and B-type mismatch is correlated with TEM studies. The combined results provide evidence that the growth of either A or B orientation is strongly affected by the nature and density of the misfit dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 367
Copyright
Copyright © Materials Research Society 1985

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References

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