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Role of As in the Anisotropic Positioning of Self-Assembled InAs Quantum Dots

Published online by Cambridge University Press:  18 July 2013

Fabrizio Arciprete ,
Ernesto Placidi ,
Rita Magri ,
Massimo Fanfoni ,
Adalberto Balzarotti  and
Fulvia Patella
Fabrizio Arciprete
Affiliation:
Dipartimento di Fisica, Università di Roma “Tor Vergata”, Via della Ricerca Scientifica 1, I-00133 Roma, Italy,
Ernesto Placidi
Affiliation:
Dipartimento di Fisica, Università di Roma “Tor Vergata”, Via della Ricerca Scientifica 1, I-00133 Roma, Italy, CNR-ISM, Via Fosso del Cavaliere 100, I-00133 Roma,
Rita Magri
Affiliation:
Dipartimento di Fisica, Università di Modena e Reggio Emilia, and Centro S3 CNR-Istituto, Nanoscienze, Via Campi 213/A, 4100 Modena, Italy.
Massimo Fanfoni
Affiliation:
Dipartimento di Fisica, Università di Roma “Tor Vergata”, Via della Ricerca Scientifica 1, I-00133 Roma, Italy,
Adalberto Balzarotti
Affiliation:
Dipartimento di Fisica, Università di Roma “Tor Vergata”, Via della Ricerca Scientifica 1, I-00133 Roma, Italy,
Fulvia Patella
Affiliation:
Dipartimento di Fisica, Università di Roma “Tor Vergata”, Via della Ricerca Scientifica 1, I-00133 Roma, Italy,
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Abstract

Progress in tailoring the size, shape and positioning of Quantum Dots on the substrate is crucial for their potential applications in new optoelectronic devices for nano-photonics as well as in quantum information and computation. Using Molecular Beam Epitaxy in pulsed deposition mode we demonstrate that the nucleation of InAs Quantum Dots can be selectively guided on the GaAs(001) surface by a suitable choice of the kinetic parameters for the growth of both the GaAs buffer layer and the InAs Quantum Dots. By developing a two-species rate-equation kinetic model we show that the positioning of the Quantum Dots on only one side of mounds of the GaAs buffer can be traced back to the very small As flux gradient between the two mound slopes $\left( {\Delta F_A /F_A \approx 1 - 5\% } \right)$ caused by the proper tilting of the incoming As flux. Such gradient originates, at the relatively high growth-temperature, a net cation flow from one slope of the mound to the other that is responsible for the selective growth.

Keywords

molecular beam epitaxy (MBE)kineticsIII-V
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1551: Symposium R – Nanostructured Semiconductors and Nanotechnology , 2013 , pp. 3 - 9
Copyright
Copyright © Materials Research Society 2013 

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