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The Road To Flexible Mems Integration

Published online by Cambridge University Press:  01 February 2011

Ann Witvrouw
Ann Witvrouw*
Affiliation:
[email protected], IMEC, PT/IPSI, Kapeldreef 75, Leuven, 3001, Belgium
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Abstract

This paper first discusses the reasons for choosing CMOS-MEMS integration, in particular integration by poly-SiGe processing above CMOS. Next the current state-of-the-art for poly-SiGe MEMS integration and the needs for the future will be addressed. Market trends are translated into two roadmaps for MEMS integration. The first roadmap is based on existing poly-SiGe deposition processes at 400 − 450 ºC. The second roadmap explores processing techniques to lower the thermal budget and widen the application field of MEMS integration by using processing techniques such as metal-induced crystallization, laser annealing or self-assembly.

Keywords

SiGemicroelectro-mechanical (MEMS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1075: Symposium J – Passive and Electromechanical Materials and Integration , 2008 , 1075-J05-01
Copyright
Copyright © Materials Research Society 2008

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References

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