Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-02T23:48:35.904Z Has data issue: false hasContentIssue false
  • English
  • Français

Rheed Intensity Oscillation During Layer-by-Layer Growth of Bi-Sr-Ca-Cu-O Thin Films

Published online by Cambridge University Press:  26 February 2011

K. Yoshikawa  and
N. Sasaki
K. Yoshikawa
Affiliation:
Advanced Technology Division, Fujitsu Limited, Kawasaki, 211, Japan
N. Sasaki
Affiliation:
Advanced Technology Division, Fujitsu Limited, Kawasaki, 211, Japan
Get access

Abstract

Using in-situ reflection high-energy electron diffraction (RHEED), we studied the growth of Bi-Sr-Ca-Cu-O (BSCCO) thin films prepared by reactive evaporation using layer-by-layer deposition. Bi2Sr2CaCu2Ox(2212) tends to be grown three-dimensionally if it is grown directly on (100) SrTiO3, in contrast to Bi2Sr2CuOx(2201) which is easily grown two-dimensionally on SrTiO3. Two-dimensional 2212 growth can be realized, if a buffer layer of 2201 is deposited on (100) SrTiO3 and growth interruption is utilized after SrO layer deposition. A buffer layer of only two 2201 unit cells improved the surface crystallinity of the substrate for the epitaxial growth of 2212. Growth interruption for two minutes after the 2nd SrO layer in the half unit cell is necessary to keep two-dimensional layered growth. The resulting Tc (zero) is 76 K and Jc (at 4.2 K) is 1.5 × 106 (A/cm2) with these epitaxial films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 275: Symposium S – Layered Superconductors: Fabrication, Properties and Applications , 1992 , 461
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yoshikawa, K., Satoh, T., Sasaki, N., and Nakano, M. (1990) Proceedings of Materials Research Society Fall Meeting, November 27-December 2, 1989, Boston, U. S. A. pp 707–710 Google Scholar
2. Yoshikawa, K. and Sasaki, N. (1991) Proceedings of the 3rd International Symposium on Superconductivity, November 6–9, 1990, Sendai, Japan, pp 1073–1076 Google Scholar
3. Yokoyama, S., Ishibashi, T., Yamagami, M., and Kawabe, M., Jpn. J. Appl. Phys. 30, L106 (1990)Google Scholar
4. Matsui, Y., Maeda, H., Tanaka, Y., Takayama-Muromachi, E., Takekawa, S., and Horiuchi, S., Jpn. J. Appl. Phys. 27, L827 (1988)Google Scholar
5. Fujita, J., Yoshitake, T., Satoh, T., and Igarashi, H., Appl. Phys. Lett. 56, 295(1990)Google Scholar