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RF-Magnetron Sputtered Au/(Na,K)NbO3/SiO2/Si MFIS-diode Structures

Published online by Cambridge University Press:  17 March 2011

Akira Shibuya ,
Jung-Hyuk Koh ,
Alex Grishin ,
Veronika Kugler ,
Denis Music ,
Ulf Helmersson  and
Masanori Okuyama
Akira Shibuya
Affiliation:
Department of Condensed Matter Physics, Royal Institute of Technology, SE-164 40 Stockholm-Kista, Sweden
Jung-Hyuk Koh
Affiliation:
Department of Condensed Matter Physics, Royal Institute of Technology, SE-164 40 Stockholm-Kista, Sweden
Alex Grishin
Affiliation:
Department of Condensed Matter Physics, Royal Institute of Technology, SE-164 40 Stockholm-Kista, Sweden
Veronika Kugler
Affiliation:
Department of Physics, Linköping University, SE-581 83 Linköping, Sweden
Denis Music
Affiliation:
Department of Physics, Linköping University, SE-581 83 Linköping, Sweden
Ulf Helmersson
Affiliation:
Department of Physics, Linköping University, SE-581 83 Linköping, Sweden
Masanori Okuyama
Affiliation:
Department of Physical Science, Graduate School of Engineering Science, Osaka University, Osaka 560-8531, Japan
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Abstract

Recently we proposed ferroelectric sodium potassium niobate (Na0.5K0.5NbO3, NKN) thin films to be a candidate for applications in nonvolatile memories and electrically tunable devices [1-5]. In this paper we report on processing and characterization of metal-ferroelectric-insulatorsemiconductor (MFIS) diode structures based on RF-magnetron sputtered NKN films. 0.7 μm thick NKN films have been deposited at 650 °C on the thermally grown 47 nm thick SiO2 layer on Si(001) wafers. Stoichiometric Na0.5K0.5NbO3 ceramic target was sputtered in an O2-Ar atmosphere with a total pressure of 5 mTorr. Grown films were analyzed as deposited as well as after an oxygen annealing at 600 °C for 30 minutes. The NKN films exhibit a strong (001) preferential orientation, which was appreciably improved after the oxygen annealing. A leakage current density of 2.3 nA/cm2 at an electric field of 400 kV/cm, and a memory window of 7.2 V was measured for Au/NKN/SiO2(47nm)/Si(001) diode structures at the programmable voltage of 40 V. I-V measurements were performed in the time domain to distinguish between the relaxation of polarization, “true” leakage current, and the degradation of the resistance in ferroelectric NKN film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 688: Symposium C – Ferroelectric Thin Films X , 2001 , C7.7.1
Copyright
Copyright © Materials Research Society 2002

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