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Retention characteristics of Pb(Zr, Ti)O3 films deposited by various methods for high-density non-volatile memory

Published online by Cambridge University Press:  11 February 2011

Sangmin Shin ,
Mirko Hofmann ,
Yong Kyun Lee ,
Choong Rae Cho ,
June Key Lee ,
Youngsoo Park ,
Kyu Mann Lee  and
Yoon Jong Song
Sangmin Shin
Affiliation:
Materials & Devices Laboratory, Samsung Advanced Institute of Technology, Suwon 440–600, Korea
Mirko Hofmann
Affiliation:
Materials & Devices Laboratory, Samsung Advanced Institute of Technology, Suwon 440–600, Korea
Yong Kyun Lee
Affiliation:
Materials & Devices Laboratory, Samsung Advanced Institute of Technology, Suwon 440–600, Korea
Choong Rae Cho
Affiliation:
Materials & Devices Laboratory, Samsung Advanced Institute of Technology, Suwon 440–600, Korea
June Key Lee
Affiliation:
Materials & Devices Laboratory, Samsung Advanced Institute of Technology, Suwon 440–600, Korea
Youngsoo Park
Affiliation:
Materials & Devices Laboratory, Samsung Advanced Institute of Technology, Suwon 440–600, Korea
Kyu Mann Lee
Affiliation:
Process development team, Samsung Electronics, Yongin 449–900, Korea
Yoon Jong Song
Affiliation:
Process development team, Samsung Electronics, Yongin 449–900, Korea
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Abstract

Retention loss is a significant issue for an application of ferroelectric thin films to high-density non-volatile memory devices. We investigated the polarization retention characteristics of ferroelectric Pb(Zr,Ti)O3 (PZT) thin films which were fabricated on Pt/IrO2/Ir substrates by different deposition methods. In thermally-accelerated retention failure tests, Pb(Zr,Ti)O3 (PZT) films which were prepared by a chmeical solution deposition (CSD) method showed rapid decay of retained polarization charges as the films became thinner down to 1000 Å, while the films which were grown by metal organic chemical vapor deposition (MOCVD) showed relatively large nonvolatile charges at the same thickness. We concluded that in the CSD-grown films, the relatively large interfacial passive layer compared with the MOCVD-grown films had an unfavorable effect on retention behavior. We observed the existence of such interfacial layers by extrapolation of the total capacitance with thickness of the films and the capacitance of this layer was larger in MOCVD-grown films. It means that the possibility of the accumulation of space charges at the interface was reduced, so that less imprint and less retention loss could be observed in the MOCVD-grown films.

Keywords

PZTMOCVDCSD(sol-gel)FRAMretention lossferroelectricthin film.
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 748: Symposium U – Ferroelectric Thin Films XI , 2002 , U4.1
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Sharma, A. K., Semiconductor Memories (IEEE, New York, 1997) p.387.Google Scholar
2. Ramesh, R., Chan, W. K., Wilkens, B., Gilchrist, H., Sands, T., Tarascon, J. M., Keramidas, V. G., Fork, D. K., Lee, J., and Safari, A., Appl. Phys. Lett. 61, 1537 (1992).Google Scholar
3. Al-Shareef, H. N., Auciello, O., and Kingon, A. I., J. Appl. Physics. 77, 2146 (1995).Google Scholar
4. Benedetto, J. M., Moore, R. A., and McLean, F. B., J. Appl. Phys. 75, 460 (1994).Google Scholar
5. Mihara, T., Yoshimori, H., Watanabe, H. and Paz de Araujo, C. A., Jpn. J. Appl. Phys. 34, 2380 (1995).Google Scholar
6. Moazzami, R., Abt, N., Nissan-Cohen, Y., Shepherd, W. H., Brassington, M. P. and Hu, C., Dig. Tech. Pap. Symp. (VLSI Technol., Oiso, Kanagawa, 1991) p.61.Google Scholar
7. Jung, Donjin, Kim, Hyunho, Song, Yoonjong, Jang, Nakwon, Koo, Bonjae, Lee, Sungyung, Park, Soonoh, Park, Yungwook, Kim, Kinam, (IEEE, New York, 2000) p 801.Google Scholar
8. Park, Youngsoo, Lee, June key, Lee, Yong Kyun, Chung, Ilsub, Yong, Jung Soo, and Park, Young Ho, Integrated Ferroelectrics, 39, 231 (2001).Google Scholar
9. Lee, Kyu-Mann, An, Hyeong-Geun, Lee, June-Key, Lee, Yong-Tak, Lee, Sang-Woo, Joo, Suk-Ho, Nam, Sang-Don, Park, Kun-Sang, Lee, Moon-Sook, Park, Soon-Oh, Kang, Ho-Kyu, and Moon, Joo-Tae, Jpn. J. Appl. Phys. 40, 4979 (2001).Google Scholar
10. Grossmann, M., Lohse, O., Bolten, D., Boettger, U., Schneller, T. and Waser, R., J. Appl. Phys. 92, 2680 (2002).Google Scholar
11. Grossmann, M., Lohse, O., Bolten, D., Boettger, U., and Waser, R., J. Appl. Phys. 92, 2688 (2002).Google Scholar