Hostname: page-component-745bb68f8f-g4j75 Total loading time: 0 Render date: 2025-01-27T02:27:58.087Z Has data issue: false hasContentIssue false
  • English
  • Français

Retardation in the Oxidation Rate of Nanocrystalline Silicon Quantum Dots

Published online by Cambridge University Press:  17 March 2011

J. Omachi ,
R. Nakamura ,
K. Nishiguchi  and
S. Oda
J. Omachi
Affiliation:
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
R. Nakamura
Affiliation:
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
K. Nishiguchi
Affiliation:
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
S. Oda
Affiliation:
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
Get access

Abstract

Using very-high-frequency (VHF) plasma decomposition of SiH4 and pulsed gas technique, we have successfully prepared nanocrystalline silicon (nc-Si) quantum dots having average diameter of 8 nm and dispersion of 1 nm. The role of natural oxide is very important. It controls the size of nc-Si dots. Of particular interest is that the oxidation of these dots can be self limited, due to the stress induced near Si/oxide interface, which would allow further reduction of size and improvement in dispersion. This paper deals with the systematic study of oxidation process of nc-Si dots. Nc-Si dots formed in an Ar plasma with SiH4 gas pulses are deposited onto a Pt mesh The dots are then oxidized at 750, 800 and 850°C from 20 minutes to 15 hours. The dimensions of the residual nc-Si and the grown oxide are measured directly from the TEM micrographs and analyzed. For comparison, field oxide is investigated using ellipsometry. Retardation in the oxidation rate of nc-Si is observed. The mechanism of the reduction of oxidation rate in nc-Si is discussed taking into account the effect of stress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F5.3.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Itoh, A., Ifuku, T., Otobe, M. and Oda, S., Mat. Res. Soc. Symp. Proc, 452, 749 (1997).Google Scholar
2. Nishiguchi, K., Hara, S., Amano, T., Hatatani, S. and Oda, S., Mat. Res. Soc. Symp.Proc, 571, 43 (2000).Google Scholar
3. Liu, H. I., Biegelsen, D. K., Ponce, F. A., Johnson, N. M., and Pease, R. W., Appl. Phys. Lett, 64,1383 (1994).Google Scholar
4. Heidemeyer, H., Single, C., Zhou, F., Prins, F. E., Kern, D. P., and Plies, E., J. Appl. Phys, 87, 4580 (2000).Google Scholar
5. Kao, Dah-Bin, Mcvittie, James P., Nix, William D., and Saraswat, Krishna C., IEEE Trans. Electron Devices, ED–35, 25 (1988).Google Scholar
6. Deal, B. E. and Grove, A. S., J. Appl. Phys, 36, 3770 (1965).Google Scholar
7. Paul, W. and Warschauer, D. M., and Eds, Solid under Pressure, New York: McGraw-Hill (1963).Google Scholar
8. Bridgman, P. W., The Physics of High Pressure, London: G. Bell and Sons, Ltd. (1949).Google Scholar
9. Hersey, M. D., Theory and Research in Lubrication, New York: Wiley (1966).Google Scholar
10. Dane, E. B. Jr., and Birch, F., J. Appl. Phys, 9, 669, (1938).Google Scholar
11. EerNisse, E. P., Appl. Phys. Lett, 35, 8 (1979).Google Scholar
12. Hetherington, G., Jack, K. H., and Kennedy, J. C., Phys. Chem. Glasses, 5, 130 (1964).Google Scholar