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Resonant Energy Transfer due to Exciton Coupling in Hybrid Persovskites Conjugated to GaN Semiconductors

Published online by Cambridge University Press:  01 February 2011

Jianyou Li ,
Arup Neogi  and
Teruya Ishihara
Jianyou Li
Affiliation:
[email protected], University of North Texas, Physics, 211 Ave. A, Denton, TX, 76203, United States, 9403698437
Arup Neogi
Affiliation:
University of North Texas, Department of Physics, 211 Ave. A, Denton, TX, 76203, United States
Teruya Ishihara
Affiliation:
[email protected], RIKEN, Wako, 351-0198, Japan
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Abstract

Exciton-Exciton coupling in hybrid persovskites conjugated to GaN Semiconductors system has been studied. Excitons are strongly coupled in (C6H5C2H4NH3)2PbI4[bis(phenethyl-ammonium)tetraiodoplumbatel] (PEPI) is a hybrid inorganic-organic layered, with a perovskite structure quantum well (QW). The inorganic PbI4 monolayer is sandwiched between organic layers. The interaction between electron and hole forming the bound exciton is significantly stronger due to dielectric confinement. The lowest exciton binding energy is 220 meV, which is 20 times in comparison to GaAs. Gallium nitride (GaN) semiconductor has defect bound excitons with absorption band, which overlaps with the emission spectra of the PEPI system. This facilitates resonant energy transfer (RET) from the GaN defect bound exciton states to the excitons confined in the PEPI layer. We investigated the interaction by photoluminescence (PL) and found that 1s exciton in the PEPI layer strongly couples with the GaN defect level exciton, which is pronounced at lower temperature (< ∼ 100 K).

Keywords

III-Vluminescenceself-assembly
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I15-07
Copyright
Copyright © Materials Research Society 2007

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References

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