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Residual Stresses in TiO2 Anatase Thin Films Deposited on Glass, Sapphire and Si Substrates

Published online by Cambridge University Press:  01 February 2011

Ibrahim A. Al-Homoudi ,
Linfeng Zhang ,
D.G. Georgiev ,
R. Naik ,
V.M. Naik ,
L. Rimai ,
K.Y. Simon Ng ,
R.J. Baird ,
G.W. Auner  and
G. Newaz
Ibrahim A. Al-Homoudi
Affiliation:
Department of Mechanical Engineering, Wayne State University, Detroit, MI 48202.
Linfeng Zhang
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI 48202.
D.G. Georgiev
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI 48202.
R. Naik
Affiliation:
Department of Physics and Astronomy, Wayne State University, Detroit, MI 48201.
V.M. Naik
Affiliation:
Department of Natural Sciences, University of Michigan-Dearborn, Dearborn, MI 48128.
L. Rimai
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI 48202.
K.Y. Simon Ng
Affiliation:
Department of Chemical Engineering and Material Science, Wayne State University, Detroit, MI 48202.
R.J. Baird
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI 48202.
G.W. Auner
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI 48202.
G. Newaz
Affiliation:
Department of Mechanical Engineering, Wayne State University, Detroit, MI 48202.
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Abstract

Anatase-TiO2 films (thickness 100-1000 nm) were grown on glass, sapphire, and Si(100) substrates using pulsed dc-magnetron reactive sputtering. By measuring the curvature of substrates before and after the thin film deposition, the residual stresses were determined. These results clearly show that the bi-axial stresses are compressive type and decreases with the increasing film thickness. The Raman spectra of these films were measured with two different excitation wavelengths (514 and 785 nm) and the thickness dependent shifts of Eg phonon mode were studied. The dominant 144 cm-1 Eg mode in TiO2 anatase clearly shifts to a higher value by 0.45 to 17.4 cm-1 depending on the type of substrate and the thickness of the film. Maximum shift was seen for the films on glass substrate indicating a higher bi-axial compressive stress in agreement with the curvature measurements. The excitation wavelength dependent shift of Eg mode clearly shows that the bi-axial stress increases along the film depth, being larger at the film/substrate interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 875: Symposium O – Thin Films - Stresses and Mechanical Properties XI , 2005 , O12.13
Copyright
Copyright © Materials Research Society 2005

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