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Residual Stress Measurement in Silicon Substrate After Local Thermal Oxidation Using Microscopic Raman Spectroscopy

Published online by Cambridge University Press:  26 February 2011

Hideo Miura ,
Hiroshi Sakata  and
Shinji Sakata Merl
Hideo Miura
Affiliation:
HITACHI, Ltd., 502 Kandatsu, Tsuchiura, Ibaraki 300, Japan
Hiroshi Sakata
Affiliation:
HITACHI, Ltd., 502 Kandatsu, Tsuchiura, Ibaraki 300, Japan
Shinji Sakata Merl
Affiliation:
HITACHI, Ltd., 502 Kandatsu, Tsuchiura, Ibaraki 300, Japan
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Abstract

The residual stress in silicon substrates after local thermal oxidation is discussed experimentally using microscopic Raman spectroscopy. The stress distribution in the silicon substrate is determined by three main factors: volume expansion of newly grown silicon–dioxide, deflection of the silicon–nitride film used as an oxidation barrier, and mismatch in thermal expansion coefficients between silicon and silicon dioxide.

Tensile stress increases with the increase of oxide film thickness near the surface of the silicon substrate under the oxide film without nitride film on it. The tensile stress is sometimes more than 100 MPa. On the other hand, a complicated stress change is observed near the surface of the silicon substrate under the nitride film. The tensile stress increases initially, as it does in the area without nitride film on it. However, it decreases with the increase of oxide film thickness, then the compressive stress increases in the area up to 170 MPa. This stress change is explained by considering the drastic structural change of the oxide film under the nitride film edge during oxidation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 226: Symposium H – Mechanical Behavior of Materials and Structures in Microelectronics , 1991 , 345
Copyright
Copyright © Materials Research Society 1991

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