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Reliability Study of TiN/AlCu/TiN Interconnect in Submicron Cmos Process

Published online by Cambridge University Press:  21 February 2011

Arthur T. Kuo ,
Ratan Choudhury  and
William Hata
Arthur T. Kuo
Affiliation:
R&D Department, LSI Logic Corporation, 3115 Alfred St., Santa Clara, CA 95054
Ratan Choudhury
Affiliation:
R&D Department, LSI Logic Corporation, 3115 Alfred St., Santa Clara, CA 95054
William Hata
Affiliation:
R&D Department, LSI Logic Corporation, 3115 Alfred St., Santa Clara, CA 95054
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Abstract

In this paper, the effect of thin film deposition conditions on the multilayer interconnect reliability was studied. Experimental results indicated the most reliable TiN/AICu/TiN interconnect was obtained at the deposition temperature of 350 °C without any substrate bias. This observation was in close agreement with thin film characteristics such as resistivity, grain size and intermetallic formation seen for those deposition conditions. SEM pictures showed the anti-reflective coating (ARC) TiN film did successfully suppress inter-plane extrusion during electromigration test. The failure mechanism for electromigration was also revealed to be mass transport as the result of the grain boundary diffusion instead of catastrophic open failures. The stress migration studies found that TiN/AICu/TiN had superior stress migration resistance than AICu alone.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 149
Copyright
Copyright © Materials Research Society 1993

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