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Reliability of nc-ZnO Embedded ZrHfO High-k Nonvolatile Memory Devices Stressed at High Temperatures

Published online by Cambridge University Press:  31 January 2011

Chia-Han Yang ,
Yue Kuo ,
Chen-Han Lin  and
Way Kuo
Chia-Han Yang
Affiliation:
[email protected], Texas A&M University, Thin Film Nano & Microeletronics Research Laboratory, College Station, Texas, United States
Yue Kuo
Affiliation:
[email protected], Texas A&M University, Thin Film Nano & Microeletronics Research Laboratory, College Station, Texas, United States
Chen-Han Lin
Affiliation:
[email protected], Texas A&M University, Thin Film Nano & Microeletronics Research Laboratory, College Station, Texas, United States
Way Kuo
Affiliation:
[email protected], City University of Hong Kong, Hong Kong, China
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Abstract

The nanocrystalline ZnO embedded Zr-doped HfO2 high-k dielectric has been made into MOS capacitors for nonvolatile memory studies. The device shows a large charge storage density, a large memory window, and a long charge retention time. In this paper, authors investigated the temperature effect on the reliability of this kind of device in the range of 25°C to 175°C. In addition to the trap-assisted conduction, the memory window and the breakdown strength decreased with the increase of the temperature. The high-k film's conductivity increased and the nc-ZnO's charge retention capability decreased with the increase of temperature. The nc-ZnO retained the trapped charges even after the high-k film broke down and eventually lost the charges at a higher voltage. The difference between these two voltages decreased with the increase of the temperature.

Keywords

dielectricthin filmmemory
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1160: Symposium H – Materials and Physics for Nonvolatile Memories , 2009 , 1160-H02-01
Copyright
Copyright © Materials Research Society 2009

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