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Reliability of High-Temperature Operation for GaN-Based OPAMP

Published online by Cambridge University Press:  31 January 2011

Kazuki Nomoto ,
Kazuya Hasegawa ,
Masataka Satoh  and
Tohru Nakamura
Kazuki Nomoto
Affiliation:
[email protected], Rsearch Center for Micro-Nano Technology, Hosei University, EECE, Tokyo, Japan
Kazuya Hasegawa
Affiliation:
[email protected], Rsearch Center for Micro-Nano Technology, Hosei University, EECE, Tokyo, Japan
Masataka Satoh
Affiliation:
[email protected], Rsearch Center for Micro-Nano Technology, Hosei University, EECE, Tokyo, Japan
Tohru Nakamura
Affiliation:
[email protected], Rsearch Center for Micro-Nano Technology, Hosei University, EECE, Tokyo, Japan
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Abstract

We demonstrated electrical characteristics of operational amplifier (OPAMP) circuits fabricated by GaN/AlGaN/GaN HEMTs operating over 100 oC. GaN/AlGaN/GaN HEMTs, with the extremely low source resistance were fabricated by multiple ion implantation, precisely controlled ion-implanted (I/I) resistors and Schottky barrier diodes were integrated on the silicon substrate. The GaN cap layer on the AlGaN was grown to decrease the gate leakage current and current collapse for AlGaN/GaN HEMTs.

Keywords

devicescompoundion-implantation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1195: Symposium B – Rellliability and Materials Issues of Semiconductor Optical and Electrical Devices and Materials , 2009 , 1195-B08-02
Copyright
Copyright © Materials Research Society 2010

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