Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-28T00:55:22.559Z Has data issue: false hasContentIssue false
  • English
  • Français

Reliability and Degradation Mechanisms in High Power Broad-Area InGaAs-AlGaAs Strained Quantum Well Lasers

Published online by Cambridge University Press:  28 May 2015

Yongkun Sin ,
Nathan Presser ,
Stephen LaLumondiere ,
Miles Brodie ,
Zachary Lingley ,
Neil Ives ,
Brendan Foran ,
William Lotshaw  and
Steven C. Moss
Yongkun Sin
Affiliation:
Electronics and Photonics Laboratory The Aerospace Corporation El Segundo, CA 90245-4691
Nathan Presser
Affiliation:
Electronics and Photonics Laboratory The Aerospace Corporation El Segundo, CA 90245-4691
Stephen LaLumondiere
Affiliation:
Electronics and Photonics Laboratory The Aerospace Corporation El Segundo, CA 90245-4691
Miles Brodie
Affiliation:
Electronics and Photonics Laboratory The Aerospace Corporation El Segundo, CA 90245-4691
Zachary Lingley
Affiliation:
Electronics and Photonics Laboratory The Aerospace Corporation El Segundo, CA 90245-4691
Neil Ives
Affiliation:
Electronics and Photonics Laboratory The Aerospace Corporation El Segundo, CA 90245-4691
Brendan Foran
Affiliation:
Electronics and Photonics Laboratory The Aerospace Corporation El Segundo, CA 90245-4691
William Lotshaw
Affiliation:
Electronics and Photonics Laboratory The Aerospace Corporation El Segundo, CA 90245-4691
Steven C. Moss
Affiliation:
Electronics and Photonics Laboratory The Aerospace Corporation El Segundo, CA 90245-4691
Get access

Abstract

Reliability and degradation processes in broad-area InGaAs-AlGaAs strained quantum well (QW) lasers are under intensive investigation because these lasers are the key components for fiber lasers and amplifiers that have found both industrial and military applications in recent years. Unlike single-mode lasers that were developed for high reliability telecom applications, broad-area lasers were mainly targeted for applications that require less stringent reliability of the lasers until recently. Especially, the lack of field reliability data is a concern for satellite communication systems where high reliability is required of lasers for long-term duration. For our present study, we addressed this concern by performing long-term life-tests of broad-area InGaAs-AlGaAs strained QW lasers and also by studying mechanisms that are responsible for catastrophic degradation of the lasers.

Keywords

III-Voptoelectroniclaser
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1792: Symposium CC/FF – Defects and Materials Issues in Semiconductors―Relationship to Optoelectronic Properties and Device Reliability , 2015 , mrss15-2130709
Copyright
Copyright © Materials Research Society 2015 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Rossin, V., Zucker, E., Peters, M., Everett, M., and Acklin, B., “High-power high-efficiency 910-980nm broad area laser diodes,” Proc. SPIE 5336, pp.196–202, 2004.CrossRefGoogle Scholar
Schmidt, B., Sverdlov, B., Pawlik, S., Lichtenstein, N., Müller, J., Valk, B., Baettig, R., Mayer, B., and Harder, C., “9xx high-power broad area laser diodes,” Proc. SPIE 5711, pp. 201–208, 2005.CrossRefGoogle Scholar
Sin, Y., Presser, N., Foran, B., Ives, N., and Moss, S. C., "Catastrophic facet and bulk degradation in high power multi-mode InGaAs strained quantum well single emitters”, Proc. SPIE 7198 (High-Power Diode Laser Technology and Applications VII), 719818, pp.1–12, 2009.Google Scholar
Sin, Y., Presser, N., Foran, B., and Moss, S. C., "Investigation of catastrophic degradation in high power multi-mode InGaAs strained quantum well single emitters", Proc. SPIE 6876, High Power Diode Laser Technology & Applications VI, p.68760R-1–68760R-12, 2008.Google Scholar
Sin, Y., Ives, N., Presser, N., and Moss, S. C., "Root cause investigation of catastrophic degradation in high power multi-mode InGaAs-AlGaAs strained quantum well lasers", Proc. of SPIE 7583 (High-Power Diode Laser Technology and Applications VIII), 758307, pp. 758307-1–758307-12, 2010.Google Scholar
Sin, Y., Ives, N., LaLumondiere, S., Presser, N., and Moss, S. C., "Catastrophic optical bulk damage (COBD) in high power multi-mode InGaAs-AlGaAs strained quantum well lasers", Proc. of SPIE 7918 (High-Power Diode Laser Technology and Applications IX), 791803, pp. 791803-1–791803-12, 2011.Google Scholar
Kimerling, L. C., “Recombination enhanced defect reactions,” Solid State Electron.38, pp. 1391–1401, 1978.CrossRefGoogle Scholar