Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-28T16:32:34.109Z Has data issue: false hasContentIssue false
  • English
  • Français

Relationship between film stress and dislocation microstructure evolution in thin films

Published online by Cambridge University Press:  01 February 2011

Ray Stuart Fertig  and
Shefford P. Baker
Ray Stuart Fertig
Affiliation:
[email protected], Cornell University, Materials Science and Engineering, Bard Hall 210, Ithaca, NY, 14853, United States
Shefford P. Baker
Affiliation:
[email protected], Cornell University, Materials Science and Engineering, Bard Hall 214, Ithaca, NY, 14853, United States
Get access

Abstract

Metals with one or more dimensions in the submicron regime are widely used in MEMS devices. Device stresses often exceed the strength of the corresponding bulk material by an order of magnitude and can lead to a variety of mechanical failures. At moderate temperatures, high stresses occur because dislocations are unable to move to relax the stress. This is partly because of an elastic dimensional constraint, but complex dislocation behavior, such as junction formation, annihilation, and nucleation, are also observed. In this report, we present results from analytical models, cellular automata simulations, and large-scale dislocation dynamics simulations of submicron films to examine the relationship between dislocation interactions and material strength. Our results reveal a complex relationship between dislocation interactions and stress inhomogeneity that arises from the stress fields of the dislocations. We show that the stress inhomogeneity increases both the likelihood of interactions and acts to increase the strain hardening rate.

Keywords

dislocationsthin filmstress/strain relationship
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1052: Symposium DD – Microelectromechanical Systems–Materials and Devices , 2007 , 1052-DD07-06
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Baker, S. P, Mater. Sci. Eng. A 319–321, 16 (2001).Google Scholar
[2] Baker, S. P, Keller-Flaig, R. M, and Shu, J. B, Acta Mater. 51, 3019 (2003).Google Scholar
[3] Stanec, J. R, Smith, C. H, Chasiotis, I., and Barker, N. S, J. Micromech. Microeng. 17, N7 (2007).Google Scholar
[4] Freund, L. B, J. Appl. Mech. 54, 553 (1987).Google Scholar
[5] Nix, W. D, Metall. Trans. A 20, 2217 (1989).Google Scholar
[6] Pant, P., Schwarz, K. W, and Baker, S. P, Acta Mater. 51, 3243 (2003).Google Scholar
[7] Freund, L. B, J. Appl. Phys. 68, 2073 (1990).Google Scholar
[8] Kuan, T. S and Murakami, M., Metall. Trans. A 13, 383 (1982).Google Scholar
[9] Baker, S. P, Zhang, L., and Gao, H. J, J. Mater. Res. 17, 1808 (2002).Google Scholar
[10] Phillips, M. A, Spolenak, R., Tamura, N., Brown, W. L, MacDowell, A. A, Celestre, R. S, Padmore, H. A, Batterman, B. W, Arzt, E., and Patel, J. R, Microelec. Engr. 75, 117 (2004).Google Scholar
[11] Schwarz, K. W, Phys. Rev. Lett. 91, 145503 (2003).Google Scholar
[12] Schwarz, K. W, J. Appl. Phys. 85, 108 (1999).Google Scholar
[13] Fertig, R. S, Pant, P., Schwarz, K. W, and Baker, S. P, In preparation (2007).Google Scholar
[14] Fertig, R. S and Baker, S. P, In preparation (2007).Google Scholar
[15] Freund, L. B and Hull, R., J. Appl. Phys. 71, 2054 (1992).Google Scholar