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Refractive Index Profiles of High Dose Ti Implanted Optical Waveguides in LiNbO3
Published online by Cambridge University Press: 25 February 2011
Abstract
Single crystalline substrates of LiNb03 have been implanted with 48Ti ions at 200 keV and doses up to 4 × 1017 cm−2. The implants have been performed at wafer temperatures of 77 K, 300 K and 620 K. Immediate subsequent processing at 1273 K in wet oxygen ambient led to good epitaxial regrowth at all doses, if sufficient time was allowed. The maximum observed extraordinary refractive index change after regrowth Δne=0.04, indicating a solubility limit of 3.3×l021 Ti cm−3 corresponding to 18 % of Nb5+ replaced by Ti4+.
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