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Reduction of Thermal Stress in Mbe Grown GaAs/Si by Patterning

Published online by Cambridge University Press:  28 February 2011

J. P. Van Der Ziel ,
Naresh Chand  and
J. S. Weiner
J. P. Van Der Ziel
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Naresh Chand
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. S. Weiner
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

The biaxial tensile stress of 2.65 kbar in as-grown GaAs/Si for T < 100K is reduced by post-growth patterning of the GaAs and the reduction in stress, as determined by photoluminescence and cathodoluminescence, is dependent on the pattern size and shape. For stripe patterns less than 15 gm wide the stress is largely uniaxial with stress relief normal to the stripe direction. Rectangular patterns exhibited stress relief in orthogonal directions, and a 9 x 12 µm2 rectangle exhibited an average stress of 0.5 kbar. For as-grown GaAs/Si layers 0.9 to 3.25 µm thick, the stress is weakly dependent on layer thickness. For T > looK the stress in as-grown GaAs/Si is reduced and at 295K a value of 1.51 ± 0.21 kbar is obtained. With patterned growth, using a native SiO2 mask, no reduction in stress was observed irrespective of the pattern size, indicating the importance of free GaAs edges in obtaining stress relief.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 317
Copyright
Copyright © Materials Research Society 1989

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