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Reduction of Strain in Epitaxial GaAs on CaF2/Si Substrates

Published online by Cambridge University Press:  28 February 2011

Shin Hashimoto ,
L.J. Schowalter ,
G.A. Smith ,
E.Y. Lee ,
W.M. Gibson  and
P.A. Claxton
Shin Hashimoto
Affiliation:
Physics Department and Institute for Particle-Solid Interaction, State University of New York at Albany, Albany, NY 12222.
L.J. Schowalter
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12308.
G.A. Smith
Affiliation:
Physics Department and Institute for Particle-Solid Interaction, State University of New York at Albany, Albany, NY 12222.
E.Y. Lee
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12308.
W.M. Gibson
Affiliation:
Physics Department and Institute for Particle-Solid Interaction, State University of New York at Albany, Albany, NY 12222.
P.A. Claxton
Affiliation:
Department of Electronic &Electrical Engineering University of Sheffield, UK S1 3JD.
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Abstract

This paper reports on strains in epitaxial GaAs layers grown on CaF2/Si(001) and CaF2/Si(111) heteroepitaxial substrates investigated by MeV 4He+; ion channeling. The results indicate that the CaF2 buffer layers reduce strain in the GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 257
Copyright
Copyright © Materials Research Society 1988

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References

1 See, for example, MRS symp. Proc. 67 (1986).Google Scholar
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