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Reduction of Sn02 by A-Si1-XGeX

Published online by Cambridge University Press:  25 February 2011

F. Edelman ,
R. Brener ,
C. Cytermann ,
M. Eizenberg ,
R. Weil  and
W. Beyer
F. Edelman
Affiliation:
1-Department of Materials Engineering, Technion, 32000 Haifa, Israel;
R. Brener
Affiliation:
Solid State Institute, Technion, 32000 Haifa, Israel; Department of Physics, Technion, 32000 Haifa, Israel;
C. Cytermann
Affiliation:
Solid State Institute, Technion, 32000 Haifa, Israel;
M. Eizenberg
Affiliation:
1-Department of Materials Engineering, Technion, 32000 Haifa, Israel; Solid State Institute, Technion, 32000 Haifa, Israel;
R. Weil
Affiliation:
Solid State Institute, Technion, 32000 Haifa, Israel; Department of Physics, Technion, 32000 Haifa, Israel;
W. Beyer
Affiliation:
Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany
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Abstract

Thin films of amorphous Si1−xGex:H with x=0, 0.3, 0.6, and 1 were deposited by RF glow discharge at 200-250°C on SnO2/glass substrates. The tin dioxide was reduced by heat treatment at the temperature range of 400-600°C resulting in a layered structure of silicon oxide, tin suboxide and ß-Sn which formed at the a-Si1−xGex:H/SnO2 interface. A strong dependence of the extent of the reduction on the Ge content in the a-Si1−xGex:H films was found: at low temperatures (T≤475°C) the Si-rich layers were more reactive, whereas at T≥475°C the Ge-rich films totally reduced the SnO2. The interfacial reduction process was followed by a drop in the transparency and drastic changes in the sheet resistance of the a-Si1−xGex:H/SnO2 contacts.

PACS: 61.43.Dq; 78.66; 82.65.-i; 82.65.Fr; 82.65.Yh

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 589
Copyright
Copyright © Materials Research Society 1995

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References

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