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Reduction of Ca and F Segregated at the Surface of a Si/CaF2/Si(100) Structure By Solid Phase Epitaxy of Si

Published online by Cambridge University Press:  28 February 2011

Masayoshi Sasaki ,
Hiroshi Onoda  and
Norio Hirashita
Masayoshi Sasaki
Affiliation:
VLSI Research Laboratory, OKI Electric Industry Co.,Ltd. Higashiasakawa, Hachioji, Tokyo 193, Japan
Hiroshi Onoda
Affiliation:
VLSI Research Laboratory, OKI Electric Industry Co.,Ltd. Higashiasakawa, Hachioji, Tokyo 193, Japan
Norio Hirashita
Affiliation:
VLSI Research Laboratory, OKI Electric Industry Co.,Ltd. Higashiasakawa, Hachioji, Tokyo 193, Japan
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Abstract

Epitaxial Si films have been grown on single crystalline CaF2 on (l00)Si substrates by molecular beam epitaxy(MBE) or combination of MBE and solid phase epitaxy(SPE) of deposited amorphous Si(a-Si). It has been found that Ca and F segregate at the surface of the Si grown by MBE. The high energy electron diffraction (RHEED) patterns from the Si surface show the superstructures which are caused by the existence of Ca and F at the Si surface. To reduce the segregation effect, SPE process has been successfully applied to Si epitaxy. The Si SPE performed on top of the MBE Si layer reduces the Ca concentration at the Si surface by an order of magnitude, although the segregation effect is not completely suppressed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 149
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1.Farrow, R.F.C., Sullivan, P.W., Williams, G.M., Jones, G.R., and Cameron, D.C., J.Vac.Sci.Technol. 19, 415(1981)Google Scholar
2.Asano, T., Ishiwara, H., and Kaifu, N., Jpn.J.Appl.Phys. 22, 1474 (1983).Google Scholar
3.Fathauer, R.W. and Showalter, L.J., Appl.Phys.Lett. 4d, 519 (1984).Google Scholar
4.Pfeiffer, L., Phillips, J.M., Smith, T.P. III, Augustyniak, W.M., and West, K.W., Appl.Phys.Lett. 45, 947 (1985).Google Scholar
5.Asano, T. and Ishiwara, H., J.Appl.Phys. 55, 3566(1984)Google Scholar
6.Sasaki, M., Hirashita, N., Onoda, H., and Hagiwara, S., Appl.Phys.Lett. 46, 1056 (1985).Google Scholar
7.Smith, T.P., Phillips, J.M., Augstyniak, W.M., and Stiles, P.J., Appl.Phys. Lett. 45, 907 (1984).Google Scholar
8.Asano, T., Wakabayashi, S., and Ishiwara, H., in Extended Abstracts of the 16th Conference on Solid State Devices and Materials (Kobe Japan, 1984), p 519.Google Scholar
9.Onoda, H., Katoh, T., Hirashita, N., and Sasaki, M., in Extended Abstracts of the 17th Conference on Solid State Devices and Materials (Tokyo, 1985), p 151.Google Scholar
10.Onoda, H., Katoh, T., Hirashita, N., and Sasaki, M., in Technical Digests of International Electron Device Meeting (IEEE, Washington, 1985), in press.Google Scholar
11.Ino, S., Jpn.J.Appl.Phys. 16, 891 (1977).Google Scholar
12.Jong, T. de, Saris, F.S., Y.Tamminga,and Haisma, J., Appl.Phys.Lett. 44, 445 (1984).Google Scholar
13.Csepregi, L., Kennedy, E.F., Mayer, J.W., and Sigmon, T.W., J.Appl.Phys. 49, 3906 (1978).Google Scholar