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Recovery from the Metastable EL2 Defect in GaAs Under Monochromatic Light Illumination.

Published online by Cambridge University Press:  25 February 2011

M. O. Manasreh  and
D. W. Fischer
M. O. Manasreh
Affiliation:
Electronic Technology Laboratory (WRDC/ELRA), Wright Research and Development Center, Wright-Patterson Air Force Base, Ohio 45433-6543
D. W. Fischer
Affiliation:
Materials Laboratory (WRDC/MLPO), Wright Research and Development Center, Wright-Patterson Air Force Base, Ohio 45433-6533.
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Abstract

The infrared absorption technique is used to study the recovery of the EL2 metastable state in semi-insulating GaAs under monochromatic light illumination. The induced optical recovery is monitored after low intensity (≤ 2mW/cm2) irradiation in the energy range 0.7 ≤ hv ≤ 1.5 eV. The data exhibit a complex structure consisting of a broad band around 0.9 eV and a set of multiple sharp peaks between 1.44 and 1.5 eV. This recovery is strongly dependent on the sample, temperature and illumination time. The present results suggest that a) the existing data and theoretical predictions for the isolated AsGa antisite structure are not compatable with the optical recovery data, b) EL2 is affected dramatically by other defects (traps) present in the sample and c) the peaks observed in the optical recovery data are coincident with the arsenic vacancy energy levels and therefore the present results support the proposed complex models involving an arsenic vacancy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 827
Copyright
Copyright © Materials Research Society 1990

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