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Recombination at Dangling-Bonds and Fermi Level Effects on Steady-State Photoconductivity and Light-Induced ESR in a-Si:H

Published online by Cambridge University Press:  25 February 2011

E. Morgado
E. Morgado*
Affiliation:
Centre de Física Molecular das Universidades de Lisboa (INIC), Instituto Superior Técnico, Av. Rovisco Pais, Complexo I - IST, 1000 Lisboa, Portugal
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Abstract

A simple recombination model is proposed in order to explain Fermi level effects on steady-state photoconductivity in a-Si:H. The model assumes positively correlated dangling-bonds as the only localized states in the gap and takes into account the occupation statistics of correlated defect centers in the dark and under illumination. The steady-state photoconductivity and its dependence on the light intensity are investigated as a function of the Fermi level position in the gap. The results show a good agreement with experimental data from undoped, phosphorus and boron doped a-Si:H material. The quenching of the g≈2.0055 Electron Spin Resonance signal upon illumination in undoped samples and its enhancement in doped ones are also reproduced by the model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 763
Copyright
Copyright © Materials Research Society 1990

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References

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