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A Recessed-Gate In0.52Al0.48As/n+-In0.53Ga0.47As Misfet

Published online by Cambridge University Press:  26 February 2011

Jesús A. del Alamo  and
Takashi Mizutani
Jesús A. del Alamo
Affiliation:
Presently with Massachusetts Institute of Technology, Rm. 13-3062, Cambridge, MA 02139
Takashi Mizutani
Affiliation:
NTT LSI Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Japan
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Abstract

Scaling of the In0.52Al0.48As insulator thickness of In0.52Al0.48As/n+-In0.53Ga0.47As MIStype FET's is experimentally found to result in a drastic drop of performance below 200 Å. This is demonstrated to arise from an increase in the sheet resistance of the extrinsic portions of the device that accompanies insulator scaling. In order to solve this problem, a recessed-gate dopedchannel MISFET with a very thin (300 Å) n+-In0.53Ga0.47As cap layer has been fabricated. A 1.5 μm long gate device showed a transconductance of 285 mS/mm and a current-gain cut-off frequency of 19.4 GHz. This result proves the ability of a thin n+-In0.53Ga0.47As cap to reduce source resistance and improve device performance. The fabricated recessed-gate structure is a promising candidate for high-performance scaled MIS-type FET's based on thin, heavily-doped In0.53Gav0.47 As channels.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 659
Copyright
Copyright © Materials Research Society 1989

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References

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