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Recessed gate GaN MESFETs fabricated by the photoelectrochemical etching process

Published online by Cambridge University Press:  10 February 2011

Won Sang Lee ,
Yoon Ho Choi ,
Ki Woong Chung ,
Moo Whan Shin  and
Dong Chan Moon
Won Sang Lee
Affiliation:
Device & Materials Lab, LG Corporate Institute of Technology, 16 Woomyeon-Dong, Seocho-gu, Seoul, Korea 137–724
Yoon Ho Choi
Affiliation:
Device & Materials Lab, LG Corporate Institute of Technology, 16 Woomyeon-Dong, Seocho-gu, Seoul, Korea 137–724
Ki Woong Chung
Affiliation:
Device & Materials Lab, LG Corporate Institute of Technology, 16 Woomyeon-Dong, Seocho-gu, Seoul, Korea 137–724
Moo Whan Shin
Affiliation:
Department of Inorganic Materials Eng., Myongji University, 38–2 Nam-Dong, Yongin-Si, Kyunggi-Do, Korea
Dong Chan Moon
Affiliation:
Department of Electronic Materials Eng., Kwang Woon University, 447–1 Wolgye-Dong, Seoul, Korea
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Abstract

A new photo-electrochemical etching method was developed and used to fabricate GaN MESFETs. The etching process uses photoresist for masking illumination and the etchant is KOH based. The etching rate with 1.0 mol% of KOH for n-GaN is as high as 1600 Å/min under the Hg illumination of 35 mW/cm/2. The MESFET saturates at VDS = 4 V and pinches off at VGS = −3 V. The maximum drain current of the device is 230 mA/mmn at 300 K and the value is remained almost same for 500 K operation. The characteristic frequencies, fT and fmax, are 6.35 GHz and 10.25 GHz, respectively. Insensitivity of the device performance to temperature was attributed to the defect-related high activation energy of dopants for ionization and band-bending at the subgrain boundaries in GaN thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 481
Copyright
Copyright © Materials Research Society 1999

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References

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