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Recent Progress on GaN HEMTs

Published online by Cambridge University Press:  01 February 2011

Shigeru Nakajima ,
Yasunori Tateno  and
Seigo Sano
Shigeru Nakajima
Affiliation:
[email protected], Eudyna Devices Inc., Yokohama, Japan
Yasunori Tateno
Affiliation:
[email protected], Eudyna Devices Inc., Koufu, Japan
Seigo Sano
Affiliation:
[email protected], Eudyna Devices Inc., Yokohama, Japan
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Abstract

This paper is overviewed the recent progress on GaN HEMTs. High power, high frequency and high efficiency performance are reported. In addition, the results about long-term reliabilities and good manufacturability demonstrate that GaN HEMTs are ready for mass production.

Keywords

III-Vmicroelectronicssemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1108: Symposium A – Performance and Reliability of Semiconductor Devices , 2008 , 1108-A03-01
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

1. Keller, S. et al., J. Appl. Physics, Vol.86, No.10, p. 5850, 1999 Google Scholar
2. Smorchkova, P. et al., J. Appl. Physics, Vol.90, No.10, p. 5196, 2001 Google Scholar
3. Egawa, T., et al., Electron. Lett., Vol.36, No.21, p. 1816, 2000 Google Scholar
4. Vetury, R. et al., IEEE Trans. Electron Devices, Vol.48, p. 560, 2001.Google Scholar
5. Hashizume, T. et al., Appl. Phys. Lett., Vol.83, No. 14, p. 2952, 2003.Google Scholar
6. Green, B.M. et al., IEEE Trans. Electron Devices, Vol.21, No. 6, p. 268, 2000.Google Scholar
7. Ando, Y. et al., IEEE Electron Device Lett, Vol. 24, p. 289, 2003.Google Scholar
8. Wu, Y-F. et al., IEEE Electron Device Lett., Vol. 25, No. 3, p. 117, 2004 Google Scholar
9. Mitani, et al., European Microwave IC Conf. (2007), p. 176 Google Scholar
10. Kikkawa, et al., 2008 SSDM Extended abstract (2008) p.770 Google Scholar
11. Kikkawa, et al., 2006 CS-MANTECH Digest (2006) p. 171.Google Scholar
12. Gustavsson, , Master's Thesis, Örebro University (2006).Google Scholar
13. Ui, et al., 2006 RWS (2006) p.718.Google Scholar
14. Schmelzer, et al., 2006 CS-IC (2006) p.96.Google Scholar
15. Meliani, et al., 2008 IMS Digest (2008) 751.Google Scholar
16. Yamamoto, et al., 2007 IMS Digest (2007) p.1263.Google Scholar
17. Kimball, et al., 2005 CS-IC (2005) p.89.Google Scholar
18. www.nitronex.com Google Scholar
19. www.eudyna.com Google Scholar
20. Yamaki, et al., 2007 CS-MANTECH Digest (2007) p.95 Google Scholar
21. Palacios, et al., IEEE Electron Device Lett, Vol. 27, No. 1, p. 13, 2006 10.1109/LED.2005.860882Google Scholar
22. Higashiwaki, et al., Jpn. J. Appi. Phys. 45, (2006), L1111 Google Scholar
23. Chu, et al., IEEE Electron Devices Lett., Vol. 29, No. 9, p. 974, 2008.Google Scholar
24. Makiyama, et al., Physica Status Solidi © 5 (2008) p. 2037 Google Scholar
25. Adivarahan, et al., IEEE Electron Device Lett, Vol. 28, No. 3, p. 192, 2007.Google Scholar