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Real-Time Pseudodielectric Function of Low-Temperature-Grown GaAs‡

Published online by Cambridge University Press:  10 February 2011

D.A. Gajewski ,
J.E. Guyer ,
J.J. Kopanski  and
J.G. Pellegrino
D.A. Gajewski
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD 20899-8121, [email protected]
J.E. Guyer
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD 20899-8121, [email protected]
J.J. Kopanski
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD 20899-8121, [email protected]
J.G. Pellegrino
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD 20899-8121, [email protected]
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Abstract

We present the real-time pseudodielectric function <ε(E)> of low-temperature-grown GaAs (LT-GaAs) thin films during the growth as a function of growth temperature Tg and thickness. We obtained accurate measurements of the real-time <εc(E)> by using in situspectroscopic ellipsometry (SE) in conjunction with active feedback control of the substrate temperature using diffuse reflectance spectroscopy. We show that for epitaxial LT-GaAs layers, the peak in the imaginary pseudodielectric function <ε2(E)> decreases in amplitude and sharpness systematically with decreasing Tg. We also revealed an abrupt change in <εc(E)> near the critical epitaxial thickness hepi, the value of which decreases with decreasing Tg. Above hepi, the LT-GaAs grows polycrystalline (amorphous) above (below) Tg ∼ 190°C. We also simultaneously monitored the surface roughness and crystallinity by using real-time reflection high-energy electron diffraction (RHEED). These results represent progress in obtaining real-time control over the composition and morphology of LT-GaAs

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 618: Symposium K – Morphological & Compositional Evolution of Heteroepitaxial… , 2000 , 243
Copyright
Copyright © Materials Research Society 2000

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Footnotes

†

National Research Council Postdoctoral Research Associate

§

Semiconductor Electronics Division, Electronics and Electrical Engineering Laboratory, Technology Administration, U.S. Department of Commerce

‡

Official contribution of NIST; not subject to copyright in the United States

References

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