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Real-time Monitoring of semiconductor growth by Spectroscopic ellipsometry

Published online by Cambridge University Press:  10 February 2011

B. Johs ,
J. Hale ,
C. Herzinger ,
D. Doctor ,
K. Elliott ,
G. Olson ,
D. Chow ,
J. Roth ,
I. Ferguson  and
M. Pelczynski
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B. Johs
Affiliation:
J.A. Woollam Co., Inc., 645 M St. #102, Lincoln, NE 68508, [email protected]
J. Hale
Affiliation:
J.A. Woollam Co., Inc., 645 M St. #102, Lincoln, NE 68508, [email protected]
C. Herzinger
Affiliation:
J.A. Woollam Co., Inc., 645 M St. #102, Lincoln, NE 68508, [email protected]
D. Doctor
Affiliation:
Hughes Research Labs, Malibu, CA
K. Elliott
Affiliation:
Hughes Research Labs, Malibu, CA
G. Olson
Affiliation:
Hughes Research Labs, Malibu, CA
D. Chow
Affiliation:
Hughes Research Labs, Malibu, CA
J. Roth
Affiliation:
Hughes Research Labs, Malibu, CA
I. Ferguson
Affiliation:
EMCORE Corp. Somerset, NJ
M. Pelczynski
Affiliation:
EMCORE Corp. Somerset, NJ
C. H. Kuo
Affiliation:
Arizona State University, Tempe, AZ
S. Johnson
Affiliation:
Arizona State University, Tempe, AZ
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Abstract

in situ Spectroscopic Ellipsometry (SE) is an optical technique which is well suited for the monitoring of epitaxial semiconductor growth, due to its high surface sensitivity and non-invasive nature. In this work, SE systems were installed on both MBE and MOCVD deposition systems to monitor the epitaxial growth of InxGa1−xAs and InxAl1−xAs compounds on InP substrates. The structures grown include thick lattice matched In0.53Ga0.47As buffer layers (for HBT collectors), and strained RTD structures. SE was used to monitor in real-time layer composition and thickness during growth. To enhance the precision and accuracy of the SE determined growth parameters, it was necessary to optimize the SE data analysis strategies. A methodology to determine the best spectral region for the SE data analysis in the presence of noise and systematic effects (such as angle of incidence uncertainty, detector wavelength shifts, surface roughness, uncertainty in surface temperature, non-ideal growth modes, etc.) is presented. Using the optimized data analysis strategies, long term SE-determined InxGa1−�As composition accuracy (as verified by ex situ x-ray measurements) of ±0.002 in ‘x’ was achieved. SE thickness measurements of ultra-thin (<30Å) strained AlAs barrier layers were also in excellent agreement (±0.5Å) with real-time photo-emission oscillation measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 502: Symposium II – In Situ Process Diagnostics & Intelligent Materials Processing , 1997 , 3
Copyright
Copyright © Materials Research Society 1998

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References

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