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Real Time X-Ray Studies of Interface Kinetics in Epitaxial Strained Layers

Published online by Cambridge University Press:  15 February 2011

Roy Clarke ,
Waldemar Dos Passos ,
Walter Lowe ,
Brian Rodricks  and
Cristine Brizard
Roy Clarke
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, MI 48109
Waldemar Dos Passos
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, MI 48109
Walter Lowe
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Brian Rodricks
Affiliation:
Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439
Cristine Brizard
Affiliation:
Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439
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Abstract

A new time-resolved x-ray method of probing the kinetics of interfacial strains in semiconductor heterostructures is presented. High-resolution synchrotron radiation measurements of the strain relaxation during rapid thermal annealing (RTA) show that the lattice strain of an as-grown strained layer structure GaAs-Inx.Ga1−x-As-GaAs/GaAs is relieved cooperatively by a series of sluggish discontinuous transitions. We find that ion implantation enhances the annealing kinetics of InAlAs strained layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 230: Symposium R – Phase Transformation Kinetics in Thin Films , 1991 , 225
Copyright
Copyright © Materials Research Society 1992

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References

1. Thin Films Growth Techniques for Low-dimensional Structures eds. Farrow, R.F.C., Parkin, S.S.P., Dobson, P.J., Neave, J.H. and Arrott, A.S. (Plenum, New York 1987);Google Scholar
2. Lyons, M.H. and Halliwell, M.A.G., Inst. Phys. Conf. Ser. 76, 445 (1985); L. Tapfer and K. Ploog, Phys. Rev. B 33, 5565 (1986).Google Scholar
3. Bartels, W.J. and Nijman, W., J. Crystal Growth 44, 518 (1978).Google Scholar
4. Hill, M.J. and Tanner, B.K., J. Appl. Cryst. 18, 446 (1985).Google Scholar
5. Rodricks, B., Clarke, R., Smither, R. and Fontaine, A., Rev. Sci. Instrum., 60, 2586 (1989).Google Scholar
6. Chang, K.H., Berger, P.R., Gibala, R., Bhattacharya, P.K., Singh, J., Mansfield, J.F. and Clarke, R., in Dislocations and Interfaces in Semiconductors eds. Rajan, K., Narayan, J. and Ast, D., (Metallurgical Soc. 1988) p. 157.Google Scholar
7. Adekoya, W.O., Hage-Ali, M., Muller, J.C. and Siffert, P., J. Appl. Phys. 64, 666 (1988).Google Scholar