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Read Back of Stored Data in Non Volatile Memory Devices by Scanning Capacitance Microscopy

Published online by Cambridge University Press:  20 March 2013

Rudra S. Dhar ,
St.J. Dixon-Warren ,
Mohamed A. Kawaliye ,
Jeff Campbell ,
Mike Green  and
Dayan Ban
Rudra S. Dhar
Affiliation:
Department of Electrical & Computer Engineering, Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Ave W., Waterloo, ON, N2L3G1, Canada
St.J. Dixon-Warren
Affiliation:
Chipworks, 1891 Robertson Road, Suite 500, Ottawa, ON K2H 5B7, Canada
Mohamed A. Kawaliye
Affiliation:
Chipworks, 1891 Robertson Road, Suite 500, Ottawa, ON K2H 5B7, Canada
Jeff Campbell
Affiliation:
Chipworks, 1891 Robertson Road, Suite 500, Ottawa, ON K2H 5B7, Canada
Mike Green
Affiliation:
Chipworks, 1891 Robertson Road, Suite 500, Ottawa, ON K2H 5B7, Canada
Dayan Ban
Affiliation:
Department of Electrical & Computer Engineering, Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Ave W., Waterloo, ON, N2L3G1, Canada
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Abstract

This report outlines a methodology for reading back different electrical charges, from Non Volatile Memory (NVM) based Flash devices. The charge is stored in the floating gates (FGs) of the transistors. Reading back these charges in the form of logic levels of “1 bit (1b)” and “0 bit (0b)” without deleting the information from the device was the goal. Scanning Capacitance Microscopy (SCM) with ∼50-100 nm spatial resolution was used, to directly probe the charge on Floating Gate Transistor (FGT) channels. Transistor charge values (ON/OFF or “1b/0b”) are measured. Both the sample preparation and SCM probing methods are discussed. The application has been demonstrated with SanDisk based 64 MB NAND Flash memory device.

Keywords

memoryscanning probe microscopy (SPM)nanoscale
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1527: Symposium UU – Scanning Probe Microscopy—Frontiers in Nanotechnology , 2013 , mrsf12-1527-uu03-22
Copyright
Copyright © Materials Research Society 2013

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References

REFERENCES

Nardi, C.D., Desplats, R., Perdu, P., Guérin, C., Gauffier, J.L., and Amundsen, T.B., Proc. 31st ISTFA, 256 (2005).Google Scholar
Nardi, C.D., Desplats, R., Perdu, P., Guérin, C., Gauffier, J.L., and Amundsen, T.B., Proc. 32nd ISTFA, 86 (2006).Google Scholar
Skorobogatov, S.P., University of Cambridge, Technical report n°630, www.cl.cam.ac.uk, 66 (2005).Google Scholar
Deleruyelle, D., Molas, G., De Salvo, B., Gely, M., and Lafond, D., Proc. 1st International Conference on Memory Technology and Design (ICMTD), France, 25 (2005).Google Scholar
Takasaki, Y., Yamamoto, T. “Cross-section analysis of electric devices by scanning capacitance microscope”, Proc. 10th ESREF, 987 (1999).Google Scholar
Born, A. and Wiesendanger, R., Proc. 26th ISTFA, 521 (2000).Google Scholar
Erickson, A.N., Tutorial of the 27th ISTFA, (2001).Google Scholar
Veeco Metrology Group, Manual Version 5.12r4. (2003).Google Scholar